Abstract:This study analyzes optical confinement factor and light emitting mode order for three different GaN LEDs: a conventional LED, thin Film LED, and thin Film LED with a photonic crystal (PhC) grating. For the first structure, we increase the thickness of AlxGa1-xN from 0 to 600nm, alter the x composition in AlxGa1-xN from 0.05 to 0.2 in steps of 0.05, and adjust the p-GaN and n-GaN thicknesses each from 0 to 200nm. For the second structure, we alter the n-GaN substrate thickness from 300-1000nm in steps of 100nm and 1000-4000nm in steps of 1000nm. These simulations show that increasing the substrate thickness causes the light emitting mode order to increase. The higher the mode, the more current is needed to make the device emit light. Higher current leads to shorter device lifetime. The last structure contains a photonic crystal grating with a period T = 100nm, 230nm, 460nm, 690nm, 920nm, 1500nm, 2000nm, 3000nm and 50% duty cycle. For each grating period, we display the effects on optical confinement factor and optical field intensity. The results show that changing the grating period does not affect the mode order, but does affect the optical field intensity. A larger grating period corresponds to lower optical field intensity. Maximizing optical field intensity increases the brightness of the device. The simulation method above can be used to improve the efficiency, brightness, and lifetime of GaN LEDs by reducing the effects of transverse mode coupling and maximizing the optical field intensity.

Effect of ICP etching of p-GaN layer on the optical and electrical characteristics of GaN-based LEDs

Characteristics of N-Gan after Cl-2/Ar and Cl-2/N-2 Inductively Coupled Plasma Etching

Effect of annealing on the surface characteristics of GaN-LED with AlGaN cladding after ICP dry etching

GaN-based Blue LEDs with Microstructure on P-Gan Surface Formed by Inductively Coupled Plasma Etching

Enhanced luminescence property of GaN-based LEDs with p-InGaN cap layer grown on p-GaN surface

Enhancement in the Light Output Power of Gan-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres

Characteristics of Gan Thin Films by Inductively Coupled Plasma Etching with Cl-2/Bcl3 and Cl-2/Ar

Effect of ITO Interface Modulation Layer on the Performances of LEDs with Ga-doped ZnO Electrode

Effects of V-pits Covering Layer Position on the Optoelectronic Performance of InGaN Green LEDs

Characteristics of N-Gan after ICP Etching

Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis

Etching Damage Analysis and Optimization of Inductively Coupled Plasma Etching of GaN

Nonselective etching of GaN/AlGaN heterostructures by Cl 2 /Ar/BCl 3 inductively coupled plasmas

Nonselective and smooth etching of GaN/AlGaN heterostructures by inductively coupled plasmas

High-output power GaN-LED based on surface plasmon enhancement

The Effect of Inductively Coupled Plasma Etching on the I–V Curves of the Avalanche Photodiode with GaN/AlN Periodically Stacked Structure

Improvement of Electrostatic Discharge Characteristics of InGaN/GaN MQWs Light-Emitting Diodes by Inserting an N+-Ingan Electron Injection Layer and a P-Ingan/gan Hole Injection Layer

Highly Selective Dry Etching of GaN over AlGaN Using Inductively Coupled Cl2/N2/O2 Plasmas

Optical Mode Pattern Study of GaN LEDs with and Without Top Nano-Gratings

Stripping GaN/InGaN epitaxial films and fabricating vertical GaN-based light-emitting diodes