Xiansheng Tang,Ziguang Ma,Lili Han,Zhen Deng,Yang Jiang,Wenxin Wang,Hong Chen,Chunhua Du,Haiqiang Jia
Abstract:<p>The growth technology of GaN-based light-emitting-diodes (LEDs) greatly restricts their preparation of vertical structure. Now we can get GaN-based LEDs structure on silicon (Si) substrate, which makes us a big step forward in the preparation of vertical GaN-based LEDs. Herein, we report the fabrication of vertical GaN-based LEDs through a chemical etching process to removing Si substrate combing with inductively coupled plasma reactive ion etching (ICP-RIE) to remove the un-doped buffer followed by copper (Cu) electroplating technology. By collecting photoluminescence (PL) and Raman scattering spectra of the GaN-based epitaxial structure, it is confirmed that the residual strain between the epitaxial structure and growth substrate is effectively released. The corresponding electroluminescence (EL) measurement of the vertical GaN-based LEDs was conducted by using a probing test with an optical power meter, showing a good electrical property and optical property. The vertical GaN-based LEDs have better output power and better heat dissipation capacity. This research proposes a low-cost method to fabricate freestanding and high performance vertical GaN-based LEDs.</p>
What problem does this paper attempt to address?
This paper aims to solve the difficult problems in the preparation of vertical - structure gallium nitride - based light - emitting diodes (VLEDs). Specifically, traditional horizontal - structure GaN - based LEDs have been widely used, but the vertical - structure GaN - based LEDs are complex and costly to prepare because the growth substrate (such as sapphire or silicon carbide substrate) needs to be removed. In addition, the sample is easily damaged during the substrate removal process, which affects the device performance. Therefore, the paper proposes a low - cost and efficient method to prepare free - standing high - power vertical - structure GaN - based LEDs.
### Main problems
1. **Removal of Si substrate**: The Si substrate is relatively thick (about 1.5 mm), and there is a large stress when GaN grows on the Si substrate, which makes it very difficult to directly remove the Si substrate by rapid chemical etching without generating cracks. In the paper, the Si substrate is thinned first, and then chemically etched with an appropriate proportion of etching solution in an ice - water mixture. As a result, the Si substrate is successfully removed, and a crack - free GaN/InGaN thin film is obtained.
2. **Removal of undoped AlN/AlGaN/GaN layers**: GaN - based materials are difficult to be removed by chemical etching at room temperature. Therefore, the inductively coupled plasma reactive ion etching (ICP - RIE) technique is used in the paper to remove these layers. By optimizing the proportion of etching gases and etching conditions, the undoped AlN/AlGaN/GaN layers are successfully removed with minimal damage to the GaN thin film.
3. **Electroplating of copper substrate**: The electroplating process of the copper substrate is time - consuming, and it is necessary to ensure good adhesion between the chip and the copper substrate. In the paper, by adjusting the components of the electroplating solution and the current, a bright copper substrate is successfully prepared. And by spin - coating photoresist, the chip can be easily separated from the sapphire substrate after electroplating, and finally the vertical - structure GaN - based LED is obtained.
### Experimental results
- **Stress release**: Through the tests of photoluminescence (PL) spectra and Raman scattering spectra, it is confirmed that after the removal of the Si substrate, the stress inside the GaN thin film is effectively released, which is manifested as the blue shift of the emission peak and the shift of the Raman peak to the high wavenumber direction.
- **Electrical and optical properties**: The prepared vertical - structure GaN - based LED shows good electrical and optical properties. Its light output power (LOP) is significantly higher than that of the reference sample, and it still maintains a linear growth at high currents, while the reference sample begins to saturate. This is due to the excellent reflection and heat dissipation properties of the copper substrate.
### Conclusion
The paper successfully prepares vertical - structure GaN - based LEDs through chemical etching, ICP - RIE technology and copper electroplating technology. The whole process does not require high - temperature and high - pressure treatment, avoiding material damage and complex preparation processes. The prepared vertical - structure GaN - based LEDs have higher light output power and better heat dissipation ability, which are suitable for the preparation of high - power LEDs and have broad application prospects in new photoelectric devices and flexible photonic devices in the future.