Abstract:GaN and related III-nitrides have attracted considerable attention as promising materials for application in optoelectronic devices, in particular, light-emitting diodes (LEDs). At present, sapphire is still the most popular commercial substrate for epitaxial growth of GaN-based LEDs. However, due to its relatively large lattice mismatch with GaN and low thermal conductivity, sapphire is not the most ideal substrate for GaN-based LEDs. Therefore, in order to obtain high-performance and high-power LEDs with relatively low cost, unconventional substrates, which are of low lattice mismatch with GaN, high thermal conductivity and low cost, have been tried as substitutes for sapphire. As a matter of fact, it is not easy to obtain high-quality III-nitride films on those substrates for various reasons. However, by developing a variety of techniques, distincts progress has been made during the past decade, with high-performance LEDs being successfully achieved on these unconventional substrates. This review focuses on state-of-the-art high-performance GaN-based LED materials and devices on unconventional substrates. The issues involved in the growth of GaN-based LED structures on each type of unconventional substrate are outlined, and the fundamental physics behind these issues is detailed. The corresponding solutions for III-nitride growth, defect control, and chip processing for each type of unconventional substrate are discussed in depth, together with a brief introduction to some newly developed techniques in order to realize LED structures on unconventional substrates. This is very useful for understanding the progress in this field of physics. In this review, we also speculate on the prospects for LEDs on unconventional substrates.

GaN Substrate and GaN Homo-Epitaxy for LEDs： Progress and Challenges

Research and Recent Progress in GaN-based Semiconductor LED

Research Progress of Substrate Materials Used for GaN-Based Light Emitting Dio Des

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

GaN-based Light-Emitting Diodes on Various Substrates: a Critical Review.

Stripping GaN/InGaN epitaxial films and fabricating vertical GaN-based light-emitting diodes

Research progress of Patterned Sapphire Substrate for GaN-Based Light-Emitting Diodes

Epitaxial growth of GaN films on unconventional oxide substrates

Stress and Dislocation Control of GaN Epitaxial Films Grown on Si Substrates and Their Application in High-Performance Light-Emitting Diodes

Research progress in the preparation of patterened sapphire substrates for high-efficiency and high-power GaN-based LEDs

Defect Structure and Evolution of GaN-Based Light-Emitting Diodes on Planar and Cone-Patterned Sapphire Substrates

Progress in the Epitaxial Growth of Nonpolar GaN for LEDs

Research Progress of GaN-based LED on Silicon

New Progress in wafer epitaxy technologies for high-brightness white LEDs

Van der Waals epitaxy of GaN-based light-emitting diodes on wet-transferred multilayer graphene film

GaN LEDs on Si Substrate

Gan heteroepitaxial growth techniques

GaN-Based LEDs Grown on Graphene-Covered SiO2/Si (100) Substrate

High-efficiency Vertical-Structure GaN-based Light-Emitting Diodes on Si Substrates

Growth of III-Nitride Materials and Blue Light-Emitting Diodes by Metal Organic Vapor Phase Epitaxy

High Performance Gallium Nitride Based Blue Light Emitting Diode Material Epitaxy and Dry Etching Fabrication Technology