Abstract:A hybrid surface structure, incorporating an Ag-grid-based aluminum-doped zinc oxide (AZO) transparent conductive layer (TCL), a microhole array, 45°-sawtooth sidewalls, and an SiO<sub>2</sub> nanoparticle (NP)/microsphere (MS) passivation layer, is proposed for the characteristic improvement of GaN-based light-emitting diodes (LEDs). In order to optimize the contact behavior between the AZO and p-GaN layers, a 2-D Ag grid is applied on the contact interface. Because series resistance ${R}_{s}$ is reduced by the conductive Ag-grid pattern, a lower forward voltage and a better current spreading ability are obtained. Compared with a conventional GaN LED with an injection current of 200 mA, the proposed device exhibits a forward voltage of 4.01 V, reduced from 4.34 V, and presents 33%, 34.4%, 45.4%, 33.1%, and 45.3% enhancements in the light output power (LOP), luminous flux, luminous efficacy, external quantum efficiency (EQE), and wall-plug efficiency (WPE), respectively. Moreover, a more effective current spreading in the light emission mapping image and a higher intensity in the far-field pattern are achieved. Improvements of both electrical and optical properties verify that the proposed device is promising for practical applications in solid-state lighting.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to improve the performance of light - emitting diodes (LEDs) based on gallium nitride (GaN) materials. Specifically, the paper proposes a hybrid surface structure aiming to optimize the electrical and optical characteristics of GaN - based LEDs. This hybrid surface structure includes a silver grid (Ag - grid) - based aluminum - doped zinc oxide (AZO) transparent conductive layer (TCL), a micropore array, 45 - degree zigzag sidewalls, and a silicon dioxide nanoparticle (SiO_2 NP)/microsphere (MS) passivation layer. Through the combined use of these structures, the researchers hope to achieve the following goals: 1. **Reduce forward voltage**: By reducing the series resistance $R_s$, thereby reducing the forward voltage of the device. 2. **Improve current spreading ability**: Utilize the Ag - grid pattern to improve the current spreading ability on the p - GaN layer, reduce current crowding, and avoid local overheating and hot spots. 3. **Increase light extraction efficiency**: Through the structural design of the micropore array, 45 - degree zigzag sidewalls, and SiO_2 NP/MS passivation layer, increase the chances of photons escaping into free space, thereby increasing the light output power (LOP), luminous flux, luminous efficiency, external quantum efficiency (EQE), and wall - plug efficiency (WPE). The experimental results show that, compared with traditional GaN LEDs, the proposed hybrid surface structure significantly improves the performance of LEDs, especially in terms of light output power, luminous flux, luminous efficiency, external quantum efficiency, and wall - plug efficiency, which are increased by 33%, 34.4%, 45.4%, 33.1%, and 45.3% respectively. In addition, more uniform current spreading and higher far - field radiation intensity are also observed, further verifying the potential of this structure in practical applications.

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