Improving the External Quantum Efficiency of High Power GaN Based Flip-Chip LEDs Using Ag/SiO2/DBR/SiO2 Composite ReflectiveStructure

Liang Xu,Jing Zhan,Hong‐Bo Sun,Zhizhong Chen,Zhiyou Guo
DOI: https://doi.org/10.21203/rs.3.rs-204748/v1
2021-01-01
Abstract:Improve the light extraction efficiency and light output in the vertical direction of LEDs for high-power applications, flip-chip LEDs (FCLEDs) with an Ag/SiO2/distributed Bragg reflector/SiO2 composite reflection structure (CRS) were fabricated. The enhanced opto-electrical properties were thoroughly investigated. Compared with the normal Ag-based FCLEDs, the light output power of the CRS-FCLEDs is increased by 6.3% at an operational current of 1500 mA, with the corresponding external quantum efficiency improved by 6.0%. Further investigation proved that the CRS structure exhibited higher reflectance compared with the commonly used Ag-mirror reflective structure, which originates from the increased reflective area in the sidewall and partial area of the n-GaN contact holes. Moreover, the light emission intensity distributions and far-field angular light emission measurements show that the CRS-FCLED has a strengthened light output in the vertical direction, which shows great potential for applications in high-power fields, such as headlamps for automobiles.
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