Abstract:In this chapter, thin film GaN-based light emitting diodes (LEDs) fabricated into n-side-up and p-side-up LEDs on mirror-substrate structures using a combination of wafer bonding, laser lift-off and surface texturing techniques were described. The effects of Pd, ITO/Al, NiO/Ag, NiO/Ag/Ni, and NiO/Au/Ag mirrors on the n-side-up GaN/mirror/Si LED properties were studied. It was found that the characteristics of the vertical-conducting n-side-up GaN/mirror/Si LEDs with a NiO/Ag/Ni mirror structure showed the best performance than the other mirror ones. After the thermal anneal process, the specific contact resistance of NiO/Ag/Ni to p-GaN can be reduced. The output power of the n-side-up GaN/mirror/Si LED shows nearly three times in magnitude as compared with that of the original GaN/sapphire sample. On the other hand, the p-side-up GaN LEDs were fabricated using a combination of omni-directional reflector (ODR) and double-sided textured surface (both p-GaN and undoped-GaN) techniques. An Essential Macleod program was used to simulate the optimum thickness of the ODR structure. The reflectivity value of ODR structure used in work can reach 99%. On the top-side textured surface, the p-type GaN with hexagonal cavities was grown under low temperature (LT) conditions using metalorganic chemical vapor deposition. The GaN LED with a suitable LT p-GaN cap layer thickness was also studied. Experimental results indicate that the GaN LED sample with the 200-nm hexagonal cavity GaN layer on the surface exhibits a 50% enhancement in luminance intensity. The luminance efficiency can be improved. This indicates that the thin-film structure can enhance the light extraction efficiency of GaN-based LEDs, especially for large chip sizes.

GaN-based Blue LEDs with Microstructure on P-Gan Surface Formed by Inductively Coupled Plasma Etching

Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating

Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

High-output power GaN-LED based on surface plasmon enhancement

Fabrication and Optical Characterization of Gan-Based Nanopillar Light Emitting Diodes

Quasi-Homoepitaxial Gan-Based Blue Light Emitting Diode on Thick Gan Template

Surface Plasmon Enhanced Graphene/P-Gan Heterostructure Light-Emitting Diode by Ag Nano-Particles

Enhanced Light Extraction of InGaN LEDs with Photonic Crystals Grown on P-Gan Using Selective-Area Epitaxy and Nanospherical-Lens Photolithography

Studies Of Improving Light Extraction Efficiency Of High Power Blue Light-Emitting Diode By Photo-Enhanced Chemical Etching

Surface-plasmon-enhanced GaN-LED Based on the Quasi-Symmetrical Planar Waveguide Structure

A new structure of p-GaN/InGaN heterojunction to enhance hole injection for blue GaN-based LEDs

High-Efficiency, Microscale Gan Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates

Enhancement of Light Extraction from Microstructured GaN-Based Light Emitting Diodes by Technique of Nanoimprint

Enhanced luminescence property of GaN-based LEDs with p-InGaN cap layer grown on p-GaN surface

InGaN-Based Light-Emitting Diodes with a Cone-Shaped Sidewall Structure Fabricated Through a Crystallographic Wet Etching Process

Effect of ICP etching of p-GaN layer on the optical and electrical characteristics of GaN-based LEDs

Light Extraction Improvement from GaN-Based Light-Emitting Diodes with Nano-Patterned Surface Using Anodic Aluminum Oxide Template

Surface-plasmon-enhanced GaN-LED based on a multilayered M-shaped nano-grating.

Enhancement in the Light Output Power of Gan-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres

Thin-GaN LED Materials