Abstract:In order to solve the problem of damage to LED chip caused by inductively coupled plasma etching and substrate cutting,and improve the yield of devices,a new process for fabricating GaN-based vertical structure LED is proposed. The auto-split vertical structure LED without substrate cutting is successfully fabricated. In the process of device preparation, chemical mechanical polishing is used to reduce the thickness of n-GaN instead of inductively coupled plasma etching,which avoids the damage to the side wall and active region of the device caused by inductively coupled plasma etching. The problem of substrate cutting is solved by temporary substrate transfer technology, and a single LED chip can be obtained without substrate cutting. Compared with the regular LED,the electrical characteristics of 300 mu m x 300 mu m auto-split vertical structure LED are greatly improved. The forward voltage at 20 mA decreases from 3.17 V to 2.88 V,which decreases by 9%;the saturation current increases from 240 mA to 280 mA, increasing by 17%. The influence of electrode shape on the device performance is studied. The electrode shape is changed from disk shape to ring shape, the saturation current of 500 mu m x 500 mu m auto-split vertical structure led is increased from 450 mA to 490 mA, which is increased by 9%. The performance of auto-split vertical structure LED is expected to be improved by optimizing the electrode structure.

Vertical Electrode Structure GaN Based Light Emitting Diodes

Vertical GaN Light-Emitting Diodes Fabricated by Laser Lift-off Technique

Stripping GaN/InGaN epitaxial films and fabricating vertical GaN-based light-emitting diodes

Fabrication of vertical-structured GaN-based light-emitting diodes using auto-split laser lift-off technique

GaN-Based Thin Film Vertical Structure Light Emitting Diodes Fabricated by a Modified Laser Lift-off Process and Transferred to Cu

GaN LED/ metals/ Si structure fabricated by bonding and laser-lift off

High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate

Study of GaN light-emitting diodes fabricated by laser lift-off technique

GaN-based LEDs with a High Light Extraction Composite Surface Structure Fabricated by a Modified YAG Laser Lift-off Technology and the Patterned Sapphire Substrates

High-efficiency Vertical-Structure GaN-based Light-Emitting Diodes on Si Substrates

Auto-Split Laser Lift-Off Technique for Vertical-Injection GaN-Based Green Light-Emitting Diodes

Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off

Performance-improved Vertical GaN-based Light-Emitting Diodes on Si Substrates Through Designing the Epitaxial Structure

Research on Auto-split GaN-based Vertical Structure LED

Thin Film GaN-Based LEDs on Cu Substrates Fabricated by Laser Lift-Off

Fabrication and Characterization of GaN-Based Micro-LEDs on Silicon Substrate*

Fabrication and Investigation of InGaN/GaN Multi-quantum-well Nanowire Light Emitting Diode

High-power and reliable GaN-based vertical light-emitting diodes on 4-inch silicon substrate

High-performance Vertical GaN-based Near-Ultraviolet Light-Emitting Diodes on Si Substrates

Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

Flexible Vertical Structure GaN-based Light Emitting Diodes on an AuSn Substrate