Abstract:Laser lift-off (LLO) is an important step in the processing chain of nitride-based light-emitting diodes (LEDs), as it enables the transfer of LEDs from the growth substrate to a more suitable carrier. A distinctive feature of LLO with ultrashort pulses is the ability to use either above- or below-bandgap radiation, since nonlinear absorption becomes relevant for ultrashort pulses. This study addresses the differences in the absorption scheme for below- and above-bandgap radiation and investigates the electrical and optical properties of InGaN/GaN LEDs before and after LLO with 347 and 520 nm laser light via current–voltage and power- as well as temperature-dependent photoluminescence measurements. LLO could be successfully realized with both wavelengths. The threshold fluence required for LLO is about a factor of two larger for 520 nm compared to that for 347 nm. Furthermore, an increase in leakage current by several orders of magnitude and a significant decrease in efficiency with laser fluence are observed for below-bandgap radiation. In contrast, leakage current hardly increases and efficiency is less dependent on the laser fluence for samples lifted with 347 nm. This degradation is ascribed to the absorption of laser light in the active region, which facilitates a modification of the local defect landscape. The effect is more severe for below-bandgap radiation, as more laser light penetrates deep into the structure and reaches the active region. Ultimately, we show that LEDs lifted with ultrashort laser pulses can exhibit good quality, making ultrashort pulse LLO a viable alternative to conventional LLO with nanosecond pulses.

Study of GaN light-emitting diodes fabricated by laser lift-off technique

Thin Film GaN-Based LEDs on Cu Substrates Fabricated by Laser Lift-Off

GaN-Based Thin Film Vertical Structure Light Emitting Diodes Fabricated by a Modified Laser Lift-off Process and Transferred to Cu

Comparative Analysis of Optoelectrical Performance in Laser Lift-Off Process for GaN-Based Green Micro-LED Arrays

Femtosecond Laser Lift‐Off with Sub‐Bandgap Excitation for Production of Free‐Standing GaN Light‐Emitting Diode Chips

Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off

The impact of laser lift-off with sub-ps pulses on the electrical and optical properties of InGaN/GaN light-emitting diodes

Carbon Nanotube Assisted Lift off of GaN Layers on Sapphire

Vertical Electrode Structure GaN Based Light Emitting Diodes

Study of laser-debonded GaN light emitting diodes

Study of GaN Light-Emitting Diodes Obtained by Laser-Assisted Debonding

High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate

Enhancement of Extraction Efficiency in Laser-debonded GaN Light Emitting Diodes

Influences of Laser Lift-off Process on the Performances of Large-Area Light-Emitting Diodes

GaN-based LEDs with a High Light Extraction Composite Surface Structure Fabricated by a Modified YAG Laser Lift-off Technology and the Patterned Sapphire Substrates

Stripping GaN/InGaN epitaxial films and fabricating vertical GaN-based light-emitting diodes

High-output power GaN-LED based on surface plasmon enhancement

Flexible arrays of GaN-based Micro-LEDs fabricated on different substrates by a laser lift-off process

Cathodoluminescence Study of InGaN MQW Laser Diodes Using Laser Lift‐off Technique

GaN-based Green Resonant-Cavity Light-Emitting Diodes with Al Mirror and Copper Plate

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.