The impact of laser lift-off with sub-ps pulses on the electrical and optical properties of InGaN/GaN light-emitting diodes

Stefan Wolter,Steffen Bornemann,Andreas Waag

DOI: https://doi.org/10.1063/5.0181278

IF: 2.877

2024-01-23

Journal of Applied Physics

Abstract:Laser lift-off (LLO) is an important step in the processing chain of nitride-based light-emitting diodes (LEDs), as it enables the transfer of LEDs from the growth substrate to a more suitable carrier. A distinctive feature of LLO with ultrashort pulses is the ability to use either above- or below-bandgap radiation, since nonlinear absorption becomes relevant for ultrashort pulses. This study addresses the differences in the absorption scheme for below- and above-bandgap radiation and investigates the electrical and optical properties of InGaN/GaN LEDs before and after LLO with 347 and 520 nm laser light via current–voltage and power- as well as temperature-dependent photoluminescence measurements. LLO could be successfully realized with both wavelengths. The threshold fluence required for LLO is about a factor of two larger for 520 nm compared to that for 347 nm. Furthermore, an increase in leakage current by several orders of magnitude and a significant decrease in efficiency with laser fluence are observed for below-bandgap radiation. In contrast, leakage current hardly increases and efficiency is less dependent on the laser fluence for samples lifted with 347 nm. This degradation is ascribed to the absorption of laser light in the active region, which facilitates a modification of the local defect landscape. The effect is more severe for below-bandgap radiation, as more laser light penetrates deep into the structure and reaches the active region. Ultimately, we show that LEDs lifted with ultrashort laser pulses can exhibit good quality, making ultrashort pulse LLO a viable alternative to conventional LLO with nanosecond pulses.

physics, applied

What problem does this paper attempt to address?

This paper investigates the effects of subpicosecond laser lift-off (LLO) on the electrical and optical properties of InGaN/GaN light-emitting diodes (LEDs). InGaN/GaN LEDs are typically grown on sapphire substrates, but the poor electrical and thermal conductivity of sapphire limits device performance. LLO technology allows the transfer of LEDs from the growth substrate to a more suitable carrier. In this study, the authors used two different laser wavelengths, 347nm and 520nm, for LLO and analyzed the effects of these wavelengths on material absorption, leakage current, and efficiency.

The research found that the laser threshold energy required for 520nm (below the bandgap radiation) is approximately twice that of 347nm (above the bandgap radiation). When using the 520nm laser, a significant increase in leakage current and decrease in efficiency were observed, which is believed to be due to laser light being absorbed in the active region, altering the local defect landscape. In contrast, the samples treated with the 347nm laser showed a smaller increase in leakage current and lower dependence of efficiency on laser energy. Nevertheless, high-quality LEDs can still be achieved with subpicosecond pulse laser LLO, making it a viable alternative to conventional nanosecond pulse LLO.

The paper compares the characteristics of LEDs before and after LLO through current-voltage measurements, power dependence, and temperature dependence of photoluminescence measurements. It suggests that under wavelengths below the bandgap radiation, more laser light penetrates the structure and reaches the active region, resulting in more severe degradation.