Ultrashort Pulse Laser Lift-Off Processing of InGaN/GaN Light-Emitting Diode Chips

S. Bornemann,N. Yulianto,F. Abdi,G. Kadja,N. Majid,Soniya Gahlawat,A. Waag,H. S. Wasisto,K. Triyana
DOI: https://doi.org/10.1021/ACSAELM.0C00913
2021-01-20
Abstract:Gallium nitride (GaN) film delamination is an important process during the fabrication of GaN light-emitting diodes (LEDs) and laser diodes. Here, we utilize 520 nm femtosecond laser pulses, exploi...
Engineering,Materials Science,Physics
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