Abstract:The achievement of electrically-pumped laser diodes at the micro/nanoscale levels is anticipated to feature an indispensable role in future photonic integrated circuits. However, the conventional p–n junction device architectures are inefficient due to serious optical and electrical losses. Herein, an electrically-injected whispering-gallery-mode (WGM) microlaser diode, which contained an n-AlGaN electron-injection layer, a ZnO microwire doped with a Ga impurity (ZnO:Ga MW), a Pt nanolayer, a MgO nanolayer and a p-GaN substrate as a hole supplier, was fabricated and systematically investigated. In practice, upon continuous-wave operation of electrical pumping at ambient temperature, the well-designed n-AlGaN/n-ZnO:Ga MW/Pt/MgO/p-GaN device exhibits remarkable double-heterojunction (n–n–p) characteristics, enabling lasing in the ultraviolet spectral region, accompanied by efficient suppression of spontaneous radiation. Furthermore, the device exhibits fascinating properties, with a threshold as low as 12.5 mA and a high quality ( Q )-factor of approximately 1943. The carefully-designed double heterostructure enables superinjection of current, as well as efficient confinement of injected carriers and photons. In this case, the electron–hole recombination, light-emission/lasing region, and population-inversion zones coincide, and are mainly concentrated in the ZnO:Ga MW active region, thereby achieving the required population inversion at relatively low current-injection levels. Such a methodical design and construction of a double-heterojunction microlaser device could bring new technological opportunities to realize high-performance lasers with a low threshold, high Q -factor, distinct multiple modes, and efficient suppression of spontaneous radiation driven by electrical current.

Ultraviolet Lasing Using Individual GaN Nanobelts

GaN Ultraviolet Laser based on Bound States in the Continuum (BIC)

Low-threshold Green Lasing in Heterogeneously Integrated InGaN-based Micro-rings Covered by Distributed Bragg Reflectors on Si (100)

Ultralow Dark-Current and Superhigh Detectivity Ultraviolet Photodetector Based on Freestanding GaN Nanobelt Array

Single gallium nitride nanowire lasers

One-Step Fabrication Method of GaN Films for Internal Quantum Efficiency Enhancement and Their Ultrafast Mechanism Investigation

Centimeter-long III-Nitride nanowires and continuous-wave pumped lasing enabled by graphically epitaxial lift-off

High efficiency deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures

An electrically-pumped WGM microlaser realized in an n-AlGaN/n-ZnO:Ga microwire/Pt/MgO/p-GaN double-heterojunction device

Room-temperature lasing action in GaN quantum wells in the infrared 1.5 micron region

Fabrication of freestanding GaN nanobelts with enhanced ultraviolet photoresponse performance

High-quality AlGaN Epitaxial Structures and Realization of UVC Vertical-Cavity Surface-Emitting Lasers

Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO2/Si(100) for Monolithic Optoelectronic Integration

Femtosecond Laser Lift‐Off with Sub‐Bandgap Excitation for Production of Free‐Standing GaN Light‐Emitting Diode Chips

High-Output-Power Ultraviolet Light Source from Quasi-2d Gan Quantum Structure

Electrically-pumped WGM microlaser realized in n-AlGaN/n-ZnO:Ga microwire/Pt/MgO/p-GaN double heterojunction device

Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection.

Quantifying the Transverse-Electric-Dominant 260 nm Emission from Molecular Beam Epitaxy-Grown GaN-Quantum-Disks Embedded in AlN Nanowires: A Comprehensive Optical and Morphological Characterization

Low Threshold GaN-Based Microdisk Lasers on Silicon with High Q Factor

Optically Pumped AlGaN Double Heterostructure Deep-UV Laser by Molecular Beam Homoepitaxy: Mirror Imperfections and Cavity Loss

GaN Microdisks with a Single Porous Optical Confinement Layer for Whispering Gallery Mode Lasing