Fabrication of freestanding GaN nanobelts with enhanced ultraviolet photoresponse performance

Shishi Liu,Qiao Wang,Yicheng Xie,Yuqing Yang,Hui Wang,Jianqi Dong,Chenguang He,Longfei He,Zhitao Chen,Shuti Li,Kang Zhang,Xingfu Wang

DOI: https://doi.org/10.1016/j.apsusc.2022.156168

IF: 6.7

2022-12-28

Applied Surface Science

Abstract:High-quality single component freestanding p-type and n-type GaN nanobelts were prepared by an electrochemical (EC) lift-off technique and subsequently transferred onto SiO 2 /Si substrates for the fabrication of high-performance ultraviolet photodetectors (UV PDs). The fabricated p-type nitrogen-polar (N-polar) GaN nanobelt UV PDs exhibited high photoresponsivity (7416.7 A/W) with a high photocurrent of 311 μA and the n-type devices presented high detectivity (1.44 × 10 14 Jones) with a low dark current of 0.351 nA. Under dark condition, the thermionic field emission (TFE) and thermionic emission (TE) were found to be responsible for the current transport mechanisms of the p-type and n-type GaN nanobelt UV PDs, respectively. In addition, the enhancement of photoresponse performances in the N-polar GaN nanobelt PDs is not only attributed to their large surface-to-volume ratio but also to the strong built-in electric field. This work suggests that the rational combination of N-polar and surface effects of the freestanding GaN nanobelts is a viable approach to achieving high-performance GaN-based optoelectronic devices.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films