Abstract:Based upon GaN-on-Si wafers with a Al0.24Ga0.76N/AlN/GaN heterostructure, metal–semiconductor–metal photodetectors (MSM PDs) with nonplanar structure geometry are proposed for ultraviolet (UV) light detection. Although the presence of a highly conductive two-dimensional electron gas (2DEG) channel in the Al0.24Ga0.76N/AlN/GaN heterostructure is beneficial for realizing a high-electron-mobility transistor with a drain current of 600 mA/mm and a transconductance of 96 mS/mm, a high dark current is also observed in Schottky-barrier based MSM PDs. Using the nonplanar structure design for the MSM PDs (i.e., one Schottky contact formed on the top surface of the AlGaN mesa while the other is on the GaN buffer) achieves a significant decrease in PD’s dark current (<6 × 10−10 A). In addition, an anomalous increase in dark current of the proposed MSM PDs was found at forward bias, which could be attributed to the reduced potential barrier of the electrons in 2DEG and/or the lowering of the Schottky barrier height by hole trapping at the metal/semiconductor interface. Due to the improved signal to noise ratio and increased dissociation of the photogenerated carriers at the reverse junction (i.e., the reversely biased Schottky contact), the proposed MSM PDs operating at reverse bias exhibit enhanced UV photoresponsivity at λ < 360 nm. In addition to being used for UV light detection, these MSM PDs with a 3-dB bandwidth of 29.6 Hz are also useful for potential optical communications applications.

GaN MSM Photodetectors Fabricated on Bulk GaN with Low Dark‐current and High UV/visible Rejection Ratio

Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate

Low-dark-current Metal-Semiconductor-metal Ultraviolet Photodetector Fabricated on Homoepitaxial GaN

AlGaN-based metal–semiconductor–metal photodiodes fabricated with nonplanar structure geometry for ultraviolet light detection

Ultra-Low Dark Current AlGaN-Based Solar-Blind Metal–Semiconductor–Metal Photodetectors for High-Temperature Applications

Ultralow Dark-Current and Superhigh Detectivity Ultraviolet Photodetector Based on Freestanding GaN Nanobelt Array

High-performance Nonpolar A-Plane GaN-based Metal–semiconductor–metal UV Photo-Detectors Fabricated on LaAlO3 Substrates

Dislocation density control of GaN epitaxial film and its photodetector

Self-powered ultraviolet MSM photodetectors with high responsivity enabled by a lateral n<SUP>+</SUP>/n<SUP>-</SUP> homojunction from opposite polarity domains

Polarization-Assisted AlGaN Heterostructure-Based Solar-Blind Ultraviolet MSM Photodetectors with Enhanced Performance

Photocurrent properties of high-sensitivity GaN ultraviolet photodetectors

High Responsivity and Low Dark Current Nonpolar GaN-based Ultraviolet Photo-Detectors

Bias-Selective Dual-Operation-Mode Ultraviolet Schottky-Barrier Photodetectors Fabricated on High-Resistivity Homoepitaxial GaN

Metal-semiconductor-metal ultraviolet photodetectors directly fabricated on semi-insulating GaN:Fe template grown by hydride vapor phase epitaxy

Nonpolar (112̅0) GaN Metal–Semiconductor–Metal Photodetectors with Superior Performance on Silicon

Optimized photoresponse performances in vertical and horizontal photodetectors based on freestanding GaN membranes

Visible-Blind Metal-Semiconductor-Metal Photodetectors Based on Undoped AlGaN/GaN High Electron Mobility Transistor Structure

High-Performance Self-Powered Ultraviolet Photodetector Based On Nano-Porous Gan And Copc P-N Vertical Heterojunction

High-Performance Self-Driven Single GaN-Based p–i–n Homojunction One-Dimensional Microwire Ultraviolet Photodetectors

High Deep-Ultraviolet Quantum Efficiency Gan P-I-N Photodetectors with Thin P-Gan Contact Layer

Metal–Semiconductor–Metal Ultraviolet Avalanche Photodiodes Fabricated on Bulk GaN Substrate