Abstract:Based upon GaN-on-Si wafers with a Al0.24Ga0.76N/AlN/GaN heterostructure, metal–semiconductor–metal photodetectors (MSM PDs) with nonplanar structure geometry are proposed for ultraviolet (UV) light detection. Although the presence of a highly conductive two-dimensional electron gas (2DEG) channel in the Al0.24Ga0.76N/AlN/GaN heterostructure is beneficial for realizing a high-electron-mobility transistor with a drain current of 600 mA/mm and a transconductance of 96 mS/mm, a high dark current is also observed in Schottky-barrier based MSM PDs. Using the nonplanar structure design for the MSM PDs (i.e., one Schottky contact formed on the top surface of the AlGaN mesa while the other is on the GaN buffer) achieves a significant decrease in PD’s dark current (<6 × 10−10 A). In addition, an anomalous increase in dark current of the proposed MSM PDs was found at forward bias, which could be attributed to the reduced potential barrier of the electrons in 2DEG and/or the lowering of the Schottky barrier height by hole trapping at the metal/semiconductor interface. Due to the improved signal to noise ratio and increased dissociation of the photogenerated carriers at the reverse junction (i.e., the reversely biased Schottky contact), the proposed MSM PDs operating at reverse bias exhibit enhanced UV photoresponsivity at λ < 360 nm. In addition to being used for UV light detection, these MSM PDs with a 3-dB bandwidth of 29.6 Hz are also useful for potential optical communications applications.

Metal–Semiconductor–Metal Ultraviolet Avalanche Photodiodes Fabricated on Bulk GaN Substrate

AlGaN Ultraviolet Avalanche Photodiodes Based on a Triple-Mesa Structure

GaN MSM Photodetectors Fabricated on Bulk GaN with Low Dark‐current and High UV/visible Rejection Ratio

AlGaN-based metal–semiconductor–metal photodiodes fabricated with nonplanar structure geometry for ultraviolet light detection

Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate

Al0.1Ga0.9N P-I-n Ultraviolet Avalanche Photodiodes with Suppressed Surface Leakage Current and Uniform Avalanche Breakdown.

Low Leakage and High Gain GaN p-i-n Avalanche Photodiode With Shallow Bevel Mesa Edge Termination and Recessed Window

Ultra-violet Avalanche Photodiode Based on AlN/GaN Periodically-Stacked-structure

Al0.1Ga0.9N P-I-n Ultraviolet Avalanche Photodiodes with Avalanche Gain over 106

A Gan P-I-P-I-N Ultraviolet Avalanche Photodiode

A Pmt-Like High Gain Avalanche Photodiode Based on Gan/Aln Periodically Stacked Structure

High-Performance Al0.1Ga0.9N P-I-n Ultraviolet Avalanche Photodiodes with Ultra-Shallow Bevel Edge Terminations

Low-dark-current Metal-Semiconductor-metal Ultraviolet Photodetector Fabricated on Homoepitaxial GaN

Metal-semiconductor-metal ultraviolet photodetectors directly fabricated on semi-insulating GaN:Fe template grown by hydride vapor phase epitaxy

Three-dimensional metal–semiconductor–metal bipolar ultraviolet phototransistor based on GaN p - i - n epilayer

4H-Sic P-I-n Ultraviolet Avalanche Photodiodes Obtained by Al Implantation

High-Gain AlGaN Solar-Blind Avalanche Photodiodes

Ultraviolet Response in Coplanar Silicon Avalanche Photodiodes with CMOS Compatibility

High-Gain N-Face AlGaN Solar-Blind Avalanche Photodiodes Using a Heterostructure As Separate Absorption and Multiplication Regions

Observation of photoelectric-induced microplasma avalanche breakdown in AlGaN ultraviolet photodiode with separate absorption and multiplication structure

Enhanced Front-Illuminated P-I-p-i-n GaN/AlGaN Ultraviolet Avalanche Photodiodes