Abstract:Avalanche photodiode (APD) has been intensively investigated as a promising candidate to replace photomultiplier tubes (PMT) for weak light detection. However, in conventional APDs, a large portion of carrier energy drawn from the electric field is thermalized, and the multiplication efficiencies of electron and hole are low and close. In order to achieve high gain, the device should work under breakdown bias, where carrier multiplication proceeds bi-directionally to form a positive feedback multiplication circle. However, breakdown is hard to control, in practice, APDs should work under Geiger mode as a compromise between sustainable detection and high gain. The complexity of system seriously restricts the application. Here, we demonstrate an avalanche photodiode holding high gain without breakdown, which means no quenching circuit is needed for sustainable detection. The device is based on a GaN/AlN periodically-stacked-structure (PSS), wherein electron holds much higher efficiency than hole to draw energy from the electric field, and avalanche happens uni-directionally with high efficiency. and a recorded high gain (10^4) tested under constant bias is obtained in a prototype device, wherein the stable gain can be determined by the periodicity of the GaN/AlN PSS. This work not only brings a new light into avalanche multiplication mechanism, but also paves a technological path with high commercial value to realize highly sensitive avalanche devices working under constant bias like PMT.

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Al0.1Ga0.9N P-I-n Ultraviolet Avalanche Photodiodes with Suppressed Surface Leakage Current and Uniform Avalanche Breakdown.

Al0.1Ga0.9N P-I-n Ultraviolet Avalanche Photodiodes with Avalanche Gain over 106

A Pmt-Like High Gain Avalanche Photodiode Based on Gan/Aln Periodically Stacked Structure

Fabrication and Characterization of GaN Based P-i-n Avalanche Photodetectors

Stable multiplication gain in GaN p–i–n avalanche photodiodes with large device area

A Gan P-I-P-I-N Ultraviolet Avalanche Photodiode

Enhanced Low-Noise Gain from InAs Avalanche Photodiodes with Reduced Dark Current and Background Doping

Geiger-Mode Operation 4H-SiC Recessed-Window Avalanche Photodiodes Fabricated by N Ion Implantation

Temperature Dependent Low-Frequency Noise Characteristics of AlGaN Avalanche Photodiodes with Ultra-Shallow Bevel Edge Termination

High-Gain AlGaN Solar-Blind Avalanche Photodiodes

AlGaN Solar‐blind APD with Low Breakdown Voltage

AlGaN Ultraviolet Avalanche Photodiodes Based on a Triple-Mesa Structure

Metal–Semiconductor–Metal Ultraviolet Avalanche Photodiodes Fabricated on Bulk GaN Substrate

Ionization-Enhanced AlGaN Heterostructure Avalanche Photodiodes

Behavior of defects in GaN avalanche photodiodes grown on GaN substrates

Polarization Enhanced GaN Avalanche Photodiodes with P-Type In0.05Ga0.95N Layer

Study on AlGaN P-I-N-I-N solar-blind avalanche photodiodes with Al 0.45 Ga 0.55 N multiplication layer

Enhanced Front-Illuminated P-I-p-i-n GaN/AlGaN Ultraviolet Avalanche Photodiodes

High-performance waveguide Ge/Si avalanche photodiode with a lateral separate-absorption-charge-multiplication structure