Abstract:An avalanche photodiode (APD) is a widely used device, especially in weak light detection systems like fiber optic detection. InAlAs is suitable for the fabrication of multiplication and charge layers, and has drawn more and more attention due to its low excess noise factor and large bandgap. However, the use of InAlAs as a charge layer also poses significant problems, especially in the implementation of p-type doping. In this work, we have achieved carbon-doped p-InAlAs epitaxial layers with adjustable doping concentrations by tailoring the growth parameters through a metalorganic chemical vapor deposition system. Moreover, four InGaAs/InAlAs avalanche photodiodes with a structure of a separated i-InGaAs absorption layer, p-InAlGaAs grade layer, p-InAlAs charge layer, and i-InAlAs multiplication layer (SAGCM) were prepared by tailoring the doping concentration of the p-InAlAs charge layer. When the doping concentration of the p-InAlAs charge layer is 4.13 × 10 17 cm −3 , the fabricated photodiode exhibits avalanche multiplication characteristics. The device at a doping concentration of 4.13 × 10 17 cm −3 for the p-InAlAs charge layer has good photoelectric performance, with a responsivity as high as 12.19 A/W and a multiplication factor as high as 16 at 31.9 V measured at 300 K. By analyzing the electric field distribution within the device under different doping concentrations of the p-InAlAs charge layer, we believe that the key to good device performance lies in the appropriate doping concentration of the p-InAlAs charge layer. Our work provides some ideas for realizing an APD device with high performance and low breakdown voltage.

A Gan P-I-P-I-N Ultraviolet Avalanche Photodiode

Al0.1Ga0.9N P-I-n Ultraviolet Avalanche Photodiodes with Suppressed Surface Leakage Current and Uniform Avalanche Breakdown.

Enhanced Front-Illuminated P-I-p-i-n GaN/AlGaN Ultraviolet Avalanche Photodiodes

A Pmt-Like High Gain Avalanche Photodiode Based on Gan/Aln Periodically Stacked Structure

Low Leakage and High Gain GaN p-i-n Avalanche Photodiode With Shallow Bevel Mesa Edge Termination and Recessed Window

High-Performance Al0.1Ga0.9N P-I-n Ultraviolet Avalanche Photodiodes with Ultra-Shallow Bevel Edge Terminations

Al0.1Ga0.9N P-I-n Ultraviolet Avalanche Photodiodes with Avalanche Gain over 106

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AlGaN Ultraviolet Avalanche Photodiodes Based on a Triple-Mesa Structure

4H-Sic SACM Avalanche Photodiode with Low Breakdown Voltage and High UV Detection Efficiency

InGaAs/InAlAs avalanche photodiodes with a high responsivity and multiplication factor using carbon-doped p-InAlAs as the charge layer

AlGaN Solar‐blind APD with Low Breakdown Voltage

Avalanche Mechanism Analysis of 4H-Sic N-I-p and P-I-n Avalanche Photodiodes Working in Geiger Mode

Observation of photoelectric-induced microplasma avalanche breakdown in AlGaN ultraviolet photodiode with separate absorption and multiplication structure

A method to realize hole-initiated multiplication in front-illuminated GaN avalanche photodiodes

Al 0.4 Ga 0.6 N/Al 0.15 Ga 0.85 N Separate Absorption and Multiplication Solar-Blind Avalanche Photodiodes with a One-Dimensional Photonic Crystal Filter

Quasi-direct UV/blue GaP avalanche photodetectors

Avalanche photodiode with ultrahigh gain–bandwidth product of 1,033 GHz

Ionization-Enhanced AlGaN Heterostructure Avalanche Photodiodes

4H-Sic Ultraviolet Avalanche Photodiodes with Small Gain Slope and Enhanced Fill Factor

Vertical 4H-Sic N-I-p-n APDs with Partial Trench Isolation