Abstract:Abstract Avalanche photodiodes (APDs) have drawn huge interest in recent years and have been extensively used in a range of fields including the most important one—optical communication systems due to their time responses and high sensitivities. This article shows the evolution and the recent development of A III B V , A II B VI , and potential alternatives to formerly mentioned—“ third wave ” superlattices (SL) and two-dimensional (2D) materials infrared (IR) APDs. In the beginning, the APDs fundamental operating principle is demonstrated together with progress in architecture. It is shown that the APDs evolution has moved the device’s performance towards higher bandwidths, lower noise, and higher gain-bandwidth products. The material properties to reach both high gain and low excess noise for devices operating in different wavelength ranges were also considered showing the future progress and the research direction. More attention was paid to advances in A III B V APDs, such as AlInAsSb, which may be used in future optical communications, type-II superlattice (T2SLs, “Ga-based” and “Ga-free”), and 2D materials-based IR APDs. The latter—atomically thin 2D materials exhibit huge potential in APDs and could be considered as an alternative material to the well-known, sophisticated, and developed A III B V APD technologies to include single-photon detection mode. That is related to the fact that conventional bulk materials APDs’ performance is restricted by reasonably high dark currents. One approach to resolve that problem seems to be implementing low-dimensional materials and structures as the APDs’ active regions. The Schottky barrier and atomic level thicknesses lead to the 2D APD dark current significant suppression. What is more, APDs can operate within visible (VIS), near-infrared (NIR)/mid-wavelength infrared range (MWIR), with a responsivity ~80 A/W, external quantum efficiency ~24.8%, gain ~10 5 for MWIR [wavelength, λ = 4 μm, temperature, T = 10–180 K, Black Phosphorous (BP)/InSe APD]. It is believed that the 2D APD could prove themselves to be an alternative providing a viable method for device fabrication with simultaneous high-performance—sensitivity and low excess noise.

Avalanche photodiode with ultrahigh gain–bandwidth product of 1,033 GHz

High-speed waveguide Ge/Si avalanche photodiode with a gain-bandwidth product of 615 GHz

Resonant Si/Ge avalanche photodiode with an ultrahigh gain bandwidth product

Waveguide Ge/Si Avalanche Photodetector with Ultra-High Gain-Bandwidth Product of 1440Ghz

Tuning Performance Parameters of Ge-on-Si Avalanche Photodetector, Part II: Large Bias Operation

High-performance waveguide Ge/Si avalanche photodiode with a lateral separate-absorption-charge-multiplication structure

Double modulation of the electric field in InGaAs/Si APD by groove rings for the achievement of THz gain-bandwidth product

Broadband and Ultra-High-Sensitivity Separate Absorption–Multiplication Avalanche Phototransistor Based on a Au–WSe2–Ge Heterostructure

A Pmt-Like High Gain Avalanche Photodiode Based on Gan/Aln Periodically Stacked Structure

Fabrication of A 10 Gb/S Ingaas/Inp Avalanche Photodiode with an Algainas/Inp Distributed Bragg Reflector

High-Gain High-Sensitivity Resonant Ge/Si Apd Photodetectors

Separate absorption, charge, and multiplication staircase avalanche photodiodes

Al0.1Ga0.9N P-I-n Ultraviolet Avalanche Photodiodes with Avalanche Gain over 106

High-Performance Waveguide-Integrated Ge/Si Avalanche Photodetector with Lateral Multiplication Region

50-Gbit/s vertical illumination avalanche photodiode for 400-Gbit/s Ethernet systems

A Gan P-I-P-I-N Ultraviolet Avalanche Photodiode

Si/Ge Avalanche Photodiodes-Based Electrical Comb-Line Generators and Photoreceivers for Very-Fast Impulse Radio Wireless Linking

Infrared avalanche photodiodes from bulk to 2D materials

10 Gbps silicon waveguide-integrated infrared avalanche photodiode

Top-Illuminated Annular Ge-on-Si APD in 45-nm Lateral SOI Process With High Gain–Bandwidth Product at 4 V Reverse Bias

High-Performance Lateral Avalanche Photodiode Based on Silicon-on-Insulator Structure