Abstract:An avalanche photodiode (APD) is a widely used device, especially in weak light detection systems like fiber optic detection. InAlAs is suitable for the fabrication of multiplication and charge layers, and has drawn more and more attention due to its low excess noise factor and large bandgap. However, the use of InAlAs as a charge layer also poses significant problems, especially in the implementation of p-type doping. In this work, we have achieved carbon-doped p-InAlAs epitaxial layers with adjustable doping concentrations by tailoring the growth parameters through a metalorganic chemical vapor deposition system. Moreover, four InGaAs/InAlAs avalanche photodiodes with a structure of a separated i-InGaAs absorption layer, p-InAlGaAs grade layer, p-InAlAs charge layer, and i-InAlAs multiplication layer (SAGCM) were prepared by tailoring the doping concentration of the p-InAlAs charge layer. When the doping concentration of the p-InAlAs charge layer is 4.13 × 10 17 cm −3 , the fabricated photodiode exhibits avalanche multiplication characteristics. The device at a doping concentration of 4.13 × 10 17 cm −3 for the p-InAlAs charge layer has good photoelectric performance, with a responsivity as high as 12.19 A/W and a multiplication factor as high as 16 at 31.9 V measured at 300 K. By analyzing the electric field distribution within the device under different doping concentrations of the p-InAlAs charge layer, we believe that the key to good device performance lies in the appropriate doping concentration of the p-InAlAs charge layer. Our work provides some ideas for realizing an APD device with high performance and low breakdown voltage.

Tuning Performance Parameters of Ge-on-Si Avalanche Photodetector, Part II: Large Bias Operation

Window size dependence of gain and bandwidth in avalanche photodiodes with multiple multiplication layers under near Geiger-mode operation

Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si avalanche photodiodes.

High-Gain High-Sensitivity Resonant Ge/Si Apd Photodetectors

Enhanced Low-Noise Gain from InAs Avalanche Photodiodes with Reduced Dark Current and Background Doping

Enhanced Carrier Multiplication in InAs Quantum Dots for Bulk Avalanche Photodetector Applications

4H-Sic Ultraviolet Avalanche Photodiodes with Small Gain Slope and Enhanced Fill Factor

Ingaas-Inp Avalanche Photodiodes with Dark Current Limited by Generation-Recombination

Unipolar Carrier Multiplication High-Gain and Low-Noise AlGaN Ultraviolet Avalanche Photodiode with Periodically Stacked Structure

Gain and excess noise properties of 3-gain-stage InGaAs/InAlAs avalanche photodetector

A Pmt-Like High Gain Avalanche Photodiode Based on Gan/Aln Periodically Stacked Structure

High-performance waveguide Ge/Si avalanche photodiode with a lateral separate-absorption-charge-multiplication structure

InGaAs/InAlAs avalanche photodiodes with a high responsivity and multiplication factor using carbon-doped p-InAlAs as the charge layer

Stable multiplication gain in GaN p–i–n avalanche photodiodes with large device area

Dependence of Ge/Si Avalanche Photodiode Performance on the Thickness and Doping Concentration of the Multiplication and Absorption Layers

Performance Modulation for Back-Illuminated AlGaN Ultraviolet Avalanche Photodiodes Based on Multiplication Scaling

Geiger-Mode Operation 4H-SiC Recessed-Window Avalanche Photodiodes Fabricated by N Ion Implantation

A Compact Model for Si-Ge Avalanche Photodiodes

Discrimination Voltage and Overdrive Bias Dependent Performance Evaluation of Passively Quenched Sic Single-Photon-Counting Avalanche Photodiodes

High-performance HgCdTe avalanche photodetector enabled with suppression of band-to-band tunneling effect in mid-wavelength infrared

Back-Illuminated Separate Absorption And Multiplication Algan Solar-Blind Avalanche Photodiodes