Abstract:2D materials and their heterostructures exhibit considerable potential in the development of avalanche photodetectors (APDs) with high gain, response, and signal-to-noise ratio. These materials hold promise in addressing inherent technical challenges associated with APDs, such as low light absorption coefficient, elevated noise current, and substantial power consumption due to high bias resulting in only moderate current gain. In this work, a macro-assembled graphene nanofilm (nMAG)/epitaxial silicon (epi-Si) vertical heterostructure photodetector with a responsivity of 0.38 A W-1 and a response time of 1.4 mu s is reported. The photodetectors use high-quality nMAG as the absorption layer and a lightly-doped epi-Si layer as the multiplication region under the avalanche mode to provide a high responsivity (2.51 mA W-1) and detectivity (2.67 x 109 Jones) at 1550 nm, which can achieve high-resolution imaging. In addition, the APD displays a weak noise level and an avalanche gain of M = 1123. It can work with relatively low avalanche turn-on voltages and achieve self-quenching by switching from illumination to dark during avalanche multiplication, with a real-time data transfer rate of 38 Mbps in near-infrared light communication data links. The proposed structure enables the fabrication of high-performance APDs in the infrared range using complementary-metal-oxide-semiconductor (CMOS)-compatible processes. Silicon-based avalanche photodetectors (APDs) have emerged as crucial devices in imaging and optical communication systems. For challenges such as silicon bandgap, high operating voltage, and large noise, an innovative approach to fabricate highly sensitive multilayer graphene/epitaxial silicon near-infrared (NIR) APDs is introduced. This study also offers the opportunity to develop CMOS-compatible room temperature NIR image sensors and signal receivers. image

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Analysis of InGaAs/InP Single Photon Avalanche Diodes With Multiplication Width in Sub-Micron

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Enhanced Front-Illuminated P-I-p-i-n GaN/AlGaN Ultraviolet Avalanche Photodiodes

Separate absorption, charge, and multiplication staircase avalanche photodiodes

Performance Modulation for Back-Illuminated AlGaN Ultraviolet Avalanche Photodiodes Based on Multiplication Scaling

Ionization-Enhanced AlGaN Heterostructure Avalanche Photodiodes

Double modulation of the electric field in InGaAs/Si APD by groove rings for the achievement of THz gain-bandwidth product

4H-Sic Ultraviolet Avalanche Photodiodes with Small Gain Slope and Enhanced Fill Factor

Fine Control of the Electric Field Distribution in the Heterostructure Multiplication Region of AlGaN Avalanche Photodiodes

Direct observation of reach-through behavior in back-illuminated algan avalanche photodiode with separate absorption and multiplication structure

Observation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures

Multilayer Graphene/Epitaxial Silicon Near-Infrared Self-Quenched Avalanche Photodetectors

High-Gain N-Face AlGaN Solar-Blind Avalanche Photodiodes Using a Heterostructure As Separate Absorption and Multiplication Regions

Investigation of the Effects of the Multiplication Area Shape on the Operational Parameters of InGaAs/InAlAs SPADs

High-speed InAlAs digital alloy avalanche photodiode