Silicon single-photon avalanche diodes with nano-structured light trapping
Kai Zang,Xiao Jiang,Yijie Huo,Xun Ding,Matthew Morea,Xiaochi Chen,Ching-Ying Lu,Jian Ma,Ming Zhou,Zhenyang Xia,Zongfu Yu,Theodore I. Kamins,Qiang Zhang,James S. Harris
DOI: https://doi.org/10.1038/s41467-017-00733-y
IF: 16.6
2017-01-01
Nature Communications
Abstract:Silicon single-photon avalanche detectors are becoming increasingly significant in research and in practical applications due to their high signal-to-noise ratio, complementary metal oxide semiconductor compatibility, room temperature operation, and cost-effectiveness. However, there is a trade-off in current silicon single-photon avalanche detectors, especially in the near infrared regime. Thick-junction devices have decent photon detection efficiency but poor timing jitter, while thin-junction devices have good timing jitter but poor efficiency. Here, we demonstrate a light-trapping, thin-junction Si single-photon avalanche diode that breaks this trade-off, by diffracting the incident photons into the horizontal waveguide mode, thus significantly increasing the absorption length. The photon detection efficiency has a 2.5-fold improvement in the near infrared regime, while the timing jitter remains 25 ps. The result provides a practical and complementary metal oxide semiconductor compatible method to improve the performance of single-photon avalanche detectors, image sensor arrays, and silicon photomultipliers over a broad spectral range.