Abstract:An avalanche photodiode (APD) is a widely used device, especially in weak light detection systems like fiber optic detection. InAlAs is suitable for the fabrication of multiplication and charge layers, and has drawn more and more attention due to its low excess noise factor and large bandgap. However, the use of InAlAs as a charge layer also poses significant problems, especially in the implementation of p-type doping. In this work, we have achieved carbon-doped p-InAlAs epitaxial layers with adjustable doping concentrations by tailoring the growth parameters through a metalorganic chemical vapor deposition system. Moreover, four InGaAs/InAlAs avalanche photodiodes with a structure of a separated i-InGaAs absorption layer, p-InAlGaAs grade layer, p-InAlAs charge layer, and i-InAlAs multiplication layer (SAGCM) were prepared by tailoring the doping concentration of the p-InAlAs charge layer. When the doping concentration of the p-InAlAs charge layer is 4.13 × 10 17 cm −3 , the fabricated photodiode exhibits avalanche multiplication characteristics. The device at a doping concentration of 4.13 × 10 17 cm −3 for the p-InAlAs charge layer has good photoelectric performance, with a responsivity as high as 12.19 A/W and a multiplication factor as high as 16 at 31.9 V measured at 300 K. By analyzing the electric field distribution within the device under different doping concentrations of the p-InAlAs charge layer, we believe that the key to good device performance lies in the appropriate doping concentration of the p-InAlAs charge layer. Our work provides some ideas for realizing an APD device with high performance and low breakdown voltage.

Ionization-Enhanced AlGaN Heterostructure Avalanche Photodiodes

Fine Control of the Electric Field Distribution in the Heterostructure Multiplication Region of AlGaN Avalanche Photodiodes

An Improved Design for AlGaN Solar-Blind Avalanche Photodiodes with Enhanced Avalanche Ionization

High-Gain N-Face AlGaN Solar-Blind Avalanche Photodiodes Using a Heterostructure As Separate Absorption and Multiplication Regions

Unipolar Carrier Multiplication High-Gain and Low-Noise AlGaN Ultraviolet Avalanche Photodiode with Periodically Stacked Structure

Study on AlGaN P-I-N-I-N solar-blind avalanche photodiodes with Al 0.45 Ga 0.55 N multiplication layer

AlGaN Solar‐blind APD with Low Breakdown Voltage

An Improved Design for Solar-Blind AlGaN Avalanche Photodiodes

AlGaN Ultraviolet Avalanche Photodiodes Based on a Triple-Mesa Structure

Tuning Performance Parameters of Ge-on-Si Avalanche Photodetector, Part II: Large Bias Operation

Enhanced Front-Illuminated P-I-p-i-n GaN/AlGaN Ultraviolet Avalanche Photodiodes

Exploitation of Polarization in Back-Illuminated Algan Avalanche Photodiodes

A Pmt-Like High Gain Avalanche Photodiode Based on Gan/Aln Periodically Stacked Structure

Investigation of Back-Illuminated AlGaN Avalanche Photodiodes with P-Type Graded $$\hbox {al}_\mathrm{x}\hbox {Ga}_\mathrm{1-X}\hbox {N}$$ Al X Ga 1 - X N Layer

Significant Performance Improvement in AlGaN Solar-Blind Avalanche Photodiodes by Exploiting the Built-In Polarization Electric Field

Polarization Enhanced GaN Avalanche Photodiodes with P-Type In0.05Ga0.95N Layer

Investigation of back-illuminated AlGaN avalanche photodiodes with p-type graded Al_xGa_1-xN layer

InGaAs/InAlAs avalanche photodiodes with a high responsivity and multiplication factor using carbon-doped p-InAlAs as the charge layer

Al0.1Ga0.9N P-I-n Ultraviolet Avalanche Photodiodes with Suppressed Surface Leakage Current and Uniform Avalanche Breakdown.

High-Gain AlGaN Solar-Blind Avalanche Photodiodes

Performance Modulation for Back-Illuminated AlGaN Ultraviolet Avalanche Photodiodes Based on Multiplication Scaling