Abstract:The carrier multiplication phenomenon involves hot carriers, which gain kinetic energy while accelerating to equilibrium with the established avalanching electric fields, and is typically explained via the local avalanche model. This work presents two vertical Ge-on-Si avalanche photodetectors fabricated in a separate absorption, charge, and multiplication configuration. Uniformity in materials, doping densities, and device dimensions is maintained, except for the multiplication width, which is used as a control parameter to manipulate avalanching fields under identical electric biasing and illumination schemes. Nonlocal carrier multiplication model is implemented during analysis of the extracted current-voltage signatures under small and large reverse biasing arrangements. For such an APD characterized by thinner multiplication region (W-m=0.1 mu m), reduced linear and Geiger-mode multiplication regimes are perceived to be at play, outperforming the device having thicker multiplication region in almost all related figures of merit, e.g., responsivity (22.58 /W), photo-to-dark current ratio (similar to 10(5)), normalized photo-to-dark current ratio (2.5x 10(9) W-1) , specific detectivity (7.45x 10(12)Jones) , and noise equivalent power (similar to 2.42x 10(-15) W/root Hz) . The enhanced performance characteristics are due to excessively strong avalanching fields, reduced thermal charge density, and negligible dead space compared to its counterpart characterized by thicker multiplication width.

Significant Performance Improvement in AlGaN Solar-Blind Avalanche Photodiodes by Exploiting the Built-In Polarization Electric Field

High-Gain N-Face AlGaN Solar-Blind Avalanche Photodiodes Using a Heterostructure As Separate Absorption and Multiplication Regions

An Improved Design for AlGaN Solar-Blind Avalanche Photodiodes with Enhanced Avalanche Ionization

Exploitation of Polarization in Back-Illuminated Algan Avalanche Photodiodes

An Improved Design for Solar-Blind AlGaN Avalanche Photodiodes

Study on AlGaN P-I-N-I-N solar-blind avalanche photodiodes with Al 0.45 Ga 0.55 N multiplication layer

High-Gain AlGaN Solar-Blind Avalanche Photodiodes

Back-illuminated AlGaN Heterostructure Solar-Blind Avalanche Photodiodes with One-Dimensional Photonic Crystal Filter

Tuning Performance Parameters of Ge-on-Si Avalanche Photodetector, Part II: Large Bias Operation

Fine Control of the Electric Field Distribution in the Heterostructure Multiplication Region of AlGaN Avalanche Photodiodes

Enhanced Front-Illuminated P-I-p-i-n GaN/AlGaN Ultraviolet Avalanche Photodiodes

AlGaN Solar-Blind Avalanche Photodiodes with P-Type Hexagonal Boron Nitride

AlGaN Solar‐blind APD with Low Breakdown Voltage

Back-Illuminated Separate Absorption And Multiplication Algan Solar-Blind Avalanche Photodiodes

Direct observation of reach-through behavior in back-illuminated algan avalanche photodiode with separate absorption and multiplication structure

Investigation of back-illuminated AlGaN avalanche photodiodes with p-type graded Al_xGa_1-xN layer

Investigation of Back-Illuminated AlGaN Avalanche Photodiodes with P-Type Graded $$\hbox {al}_\mathrm{x}\hbox {Ga}_\mathrm{1-X}\hbox {N}$$ Al X Ga 1 - X N Layer

Theoretical Analysis for AlGaN Avalanche Photodiodes with Mesa and Field Plate Structure*

Ionization-Enhanced AlGaN Heterostructure Avalanche Photodiodes

High-Performance Al0.1Ga0.9N P-I-n Ultraviolet Avalanche Photodiodes with Ultra-Shallow Bevel Edge Terminations

Al 0.4 Ga 0.6 N/Al 0.15 Ga 0.85 N Separate Absorption and Multiplication Solar-Blind Avalanche Photodiodes with a One-Dimensional Photonic Crystal Filter