Abstract:A highly sensitive narrowband solar-blind ultraviolet photodetector (PD) was fabricated using polarization induced heterojunction barrier (PHB) in an n-i-i-n type AlGaN structure. The i-Al0.4 GaN/i-Al0.5GaN heterojunction is utilized to generate net negative interface polarization charges and strong polarization electric field, which can deplete the i-layers and lead to an effective interface barrier. Such a PHB can significantly hinder the carrier transport in the absence of irradiation, while localizing photogenerated holes under UV illumination, thereby lowering the barrier height and generating a high optical gain. On this basis, the top n-type injection layer and the bottom n-type transmission window layer are introduced to improve the current gain and achieve short-wavelength cutoff. The resulting PHB-PDs demonstrated a superhigh shot-noise-limited specific detectivity of ${1}.{7}\times {10} ^{{{17}}}\vphantom {{1}^{{1}^{{1}}}}$ jones at 7 V bias under 274-nm back illumination. Meanwhile, a bandpass spectral response with a linewidth of ~16 nm and an ultrahigh spectral rejection ratio over $10^{{{6}}}$ were obtained under wake light of $\sim 0.45~\mu \text{W}$ /cm $^{{-{2}}}$ . These results confirmed the feasibility of our proposed PHB-PD in highly sensitive and color-distinguishing photodetection.

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An Improved Design for AlGaN Solar-Blind Avalanche Photodiodes with Enhanced Avalanche Ionization

Significant Performance Improvement in AlGaN Solar-Blind Avalanche Photodiodes by Exploiting the Built-In Polarization Electric Field

High-Gain N-Face AlGaN Solar-Blind Avalanche Photodiodes Using a Heterostructure As Separate Absorption and Multiplication Regions

High-Gain AlGaN Solar-Blind Avalanche Photodiodes

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Fine Control of the Electric Field Distribution in the Heterostructure Multiplication Region of AlGaN Avalanche Photodiodes

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Investigation of Back-Illuminated AlGaN Avalanche Photodiodes with P-Type Graded $$\hbox {al}_\mathrm{x}\hbox {Ga}_\mathrm{1-X}\hbox {N}$$ Al X Ga 1 - X N Layer

Investigation of back-illuminated AlGaN avalanche photodiodes with p-type graded Al_xGa_1-xN layer

Al 0.4 Ga 0.6 N/Al 0.15 Ga 0.85 N Separate Absorption and Multiplication Solar-Blind Avalanche Photodiodes with a One-Dimensional Photonic Crystal Filter

Al0.1Ga0.9N P-I-n Ultraviolet Avalanche Photodiodes with Suppressed Surface Leakage Current and Uniform Avalanche Breakdown.

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Back-Illuminated Separate Absorption And Multiplication Algan Solar-Blind Avalanche Photodiodes

Electro-optical Characteristics for AlGaN Solar-Blind P-I-n Photodiode: Experiment and Simulation

High-Performance Al0.1Ga0.9N P-I-n Ultraviolet Avalanche Photodiodes with Ultra-Shallow Bevel Edge Terminations

Exploitation of Polarization in Back-Illuminated Algan Avalanche Photodiodes

High Performance Back-Illuminated MIS Structure AlGaN Solar-Blind Ultraviolet Photodiodes

Highly Sensitive Narrowband AlGaN Solar Blind Ultraviolet Photodetectors using Polarization Induced Heterojunction Barrier