Electro-optical Characteristics for AlGaN Solar-Blind P-I-n Photodiode: Experiment and Simulation

X. D. Wang,W. D. Hu,X. S. Chen,J. T. Xu,L. Wang,X. Y. Li,W. Lu
DOI: https://doi.org/10.1109/nusod.2012.6316493
2012-01-01
Abstract:The fabrication and modeling for solar-blind AlGaN-based p-i-n photodiode have been presented. The simulated dark current characteristics are in good agreement with the experiments. It is found that the peak responsivity of 0.005A/W can be achieved at 265nm corresponding to the cutoff wavelength of the Al0.45Ga0.55N absorption layer. The transmission spectra drop to nearly zero due to the intense light absorption of n-type Al0.65Ga0.35N layer.
What problem does this paper attempt to address?