Self-powered solar-blind photodetectors based on AlN/a-Ga2O3 heterojunction with nanocolumnar structure on various substrates

Zhao Liu,Wenliang Li,Zelong Fan,Yuan Cao,Feihong Zhang,Zhuoyan Qin,Baikui Li,Zhenhua Sun,Honglei Wu
DOI: https://doi.org/10.1039/d4ce00826j
IF: 3.756
2024-10-02
CrystEngComm
Abstract:AlN/amorphous Ga 2 O 3 heterojunction photodetectors were fabricated to achieve solar-blind UV detection. The responsivity and detectivity of the photodetector on the native substrate are 150% and 21.8% higher than those on the heterogeneous substrate at a 20 V bias, reaching 8.31 A·W -1 and 3.24×10 14 Jones, respectively. The built-in electric field enables self-powered UV detection without external power supply. The addition of nanocolumnar AlN structure significantly improved the performance of the photodetector, achieving a photo-to-dark current ratio and responsivity up to 2.11×10 7 and 9.17 mA·W -1 at 0 V bias. The fabricated photodetector has demonstrated self-powered and high-sensitivity UV detection.
chemistry, multidisciplinary,crystallography
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