Abstract:The spectral specificity of deep-ultraviolet (UV) photodetectors makes them useful in many fields, spanning from disinfection of various surfaces and water purification to optical communication. As silicon-based devices show obvious disadvantages as UV devices because of their low band gap, semiconductor materials with a wide band gap exceeding 4 eV serve as excellent alternatives. In this paper, by the integration of the unique properties of each constituent material, we design a nanolayered graphene/insulator/semiconductor (graphene/hBN/n-AlGaN) deep-UV photodetector with high performance. The wide-band gap AlGaN semiconductor enables the detection of deep-UV signals without the requirement of a UV-pass filter and thus acts as a true solar-blind photodetector. In addition, the several nanolayered graphene–hBN heterostructure is utilized to enhance the performance of photodetectors, which successfully solves the strain issue between graphene and the conventional bulk insulators. Besides, the high transparency of graphene can enable incident light to directly excite the active layer with negligible optical loss, and the two-dimensional hBN insulator is beneficial to reduce dark current and assist the quantum tunneling of photogenerated carriers. Interestingly, the photodetectors demonstrated in this work show the highest responsivity and detectivity compared with previously reported AlGaN-based deep-UV photodetectors.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsanm.0c01219?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsanm.0c01219</a>.Absorption spectrum and EDS spectra of the AlGaN layer; temperature dependence <i>I</i>–<i>V</i> curves of the devices with bi- and tri-layer hBN; and response and recovery times of the devices with mono-, bi-, and tri-layer hBN (<a class="ext-link" href="/doi/suppl/10.1021/acsanm.0c01219/suppl_file/an0c01219_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Dual-band solar-blind UV photodetectors based on AlGaN/AlN superlattices

Polarization-Assisted AlGaN Heterostructure-Based Solar-Blind Ultraviolet MSM Photodetectors with Enhanced Performance

Large-area solar-blind AlGaN-based MSM photodetectors with ultra-low dark current

Self-powered solar-blind photodetectors based on AlN/a-Ga2O3 heterojunction with nanocolumnar structure on various substrates

Highly solar-blind ultraviolet selective metal-semiconductor-metal photodetector based on back-illuminated AlGaN heterostructure with integrated photonic crystal filter

AlGaN-based metal–semiconductor–metal photodiodes fabricated with nonplanar structure geometry for ultraviolet light detection

The effect of structural parameters on AlGaN solar-blind metal–semiconductor-metal (MSM) photodetectors

Nanolayered Graphene/Hexagonal Boron Nitride/n-AlGaN Heterostructures as Solar-Blind Deep-Ultraviolet Photodetectors

AlGaN MSM UV Photodetector

Nanoplasmonically Enhanced High-Performance Metastable Phase Α-Ga2o3 Solar-Blind Photodetectors

Amorphous-AlZnN/graphene heterostructure for solar-blind ultraviolet photovoltaic detectors

A Back-Illuminated Al0.42 Ga0.58 N/Al0.40 Ga0.60 N Heterojunction P-I-n Solar-Blind UV Photodetector

Ultra-Low Dark Current AlGaN-Based Solar-Blind Metal–Semiconductor–Metal Photodetectors for High-Temperature Applications

Excellent Wavelength Selectivity of p-AlGaN/n-Ga 2 O 3 Solar-Blind UVC PD

Solar-blind UV photodetector with low-dark current and high-gain based on ZnO/Au/Ga2O3 sandwich structure

Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

Band Gap Engineering of AlYN Films for Solar-Blind Ultraviolet Photodetection

High-quantum-efficiency Ultraviolet Solar-Blind AlGaN Photocathode Detector with a Sharp Spectral Sensitivity Threshold at 300 Nm

Research Progress in Solar-Blind UV Detectors Based on Wide-Band Semiconductor Ga2O3

Excellent Wavelength Selectivity of P-Algan/n-ga2o3 Solar-Blind UVC PD.

Highly Uniform, Self‐Assembled AlGaN Nanowires for Self‐Powered Solar‐Blind Photodetector with Fast‐Response Speed and High Responsivity