Research Progress in Solar-Blind UV Detectors Based on Wide-Band Semiconductor Ga2O3

Leyun Shen,Tao Zhang,Yunze Liu,Huishan Wu,Fengzhi Wang,Xinhua Pan,Zhizhen Ye
DOI: https://doi.org/10.11868/j.issn.1001-4381.2021.001100
2023-01-01
Abstract:Ga2O3 is an ultra-wide band semiconductor corresponding to the deep ultraviolet(UV) spectrum, which can be used to prepare solar-blind UV detectors. The solar-blind ultraviolet detectors are widely used in military and aerospace fields dueto strong anti-interference ability, high detection sensitivity and low background noise.The basic properties of Ga2O3 materials, including different crystal structures and their preparation, and the recent progress in solar-blind UV detectors based on Ga2O3 were introduced in this paper. Among them, metal-semiconductor-metal (MSM) structure of Ga2O3 devices are the most common, which are expected to achieve business application with commercial parameters. The Ga2O3-based heterostructure and Schottky detectors also exhibit excellent performance and self-supply characteristics. In addition, Ga2O3 devices based on thin film transistor become a potential solar-blind ultraviolet detector. They combine the working mechanism of MSM and transistor structure to obtain high light gain, which are suitable for weak signal detection.
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