Abstract:Ga2O3-based solar-blind photodetectors have been extensively investigated for a wide range of applications. However, to date, a lot of research has focused on optimizing the epitaxial technique or constructing a heterojunction, and studies concerning surface passivation, a key technique in electronic and optoelectronic devices, are severely lacking. Here, we report an ultrasensitive metal–semiconductor–metal photodetector employing a β-Ga2O3 homojunction structure realized by low-energy surface fluorine plasma treatment, in which an ultrathin fluorine-doped layer served for surface passivation. Without inserting/capping a foreign layer, this strategy utilized fluorine dopants to both passivate local oxygen vacancies and suppress surface chemisorption. The dual effects have opposite impacts on device current magnitude (by suppressing metal/semiconductor junction leakage and inhibiting surface-chemisorption-induced carrier consumption) but dominate in dark and under illumination, respectively. By means of such unique mechanisms, the simultaneous improvement on dark and photo current characteristics was achieved, leading to the sensitivity enhanced by nearly 1 order of magnitude. Accordingly, the 15 min treated sample exhibited striking competitiveness in terms of comprehensive properties, including a dark current as low as 6 pA, a responsivity of 18.43 A/W, an external quantum efficiency approaching 1 × 106%, a specific detectivity of 2.48 × 1014 Jones, and a solar-blind/UV rejection ratio close to 1 × 105. Furthermore, the response speed was effectively accelerated because of the reduction on metal/semiconductor interface trap states. Our findings provide a facile, economical, and contamination-free surface passivation technique, which unlocks the potential for comprehensively improving the performance of β-Ga2O3 solar–blind metal–semiconductor–metal photodetectors.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.1c12615.Out-of-plane XRD spectrum of β-Ga2O3 epitaxial film; transmission spectrum of β-Ga2O3 epitaxial film; TEM image of β-Ga2O3 epitaxial film; high-resolution XPS Ga 3d core-level spectra of β-Ga2O3 films; I–V characteristics in dark and under 254 nm illumination on linear scales; performance comparison among the reported film-type Ga2O3 photodetectors (PDF)This article has not yet been cited by other publications.

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