High-performance solar-blind photodetector arrays constructed from Sn-doped Ga2O3 microwires via patterned electrodes

Ya-Cong Lu,Zhen-Feng Zhang,Xun Yang,Gao-Hang He,Chao-Nan Lin,Xue-Xia Chen,Jin-Hao Zang,Wen-Bo Zhao,Yan-Cheng Chen,Lei-Lei Zhang,Yi-Zhe Li,Chong-Xin Shan
DOI: https://doi.org/10.1007/s12274-022-4341-3
IF: 9.9
2022-05-20
Nano Research
Abstract:Ga 2 O 3 has been regarded as a promising material for solar-blind detection due to its ultrawide bandgap and low growth cost. Although semiconductor microwires (MWs) possess unique optical and electronic characteristics, the performances of photodetectors developed from Ga 2 O 3 MWs are still less than satisfactory. Herein, we demonstrate high-performance solar-blind photodetectors based on Sn-doped Ga 2 O 3 MWs, possessing a light/dark current ratio of 10 7 and a responsivity of 2,409 A/W at 40 V. Moreover, a 1 × 10 solar-blind photodetector linear array is developed based on the Sn-doped Ga 2 O 3 MWs via a patterned-electrodes method. And clear solar-blind images are obtained by using the photodetector array as the imaging unit of a solar-blind imaging system. The results provide a convenient way to construct high-performance solar-blind photodetector arrays based on Ga 2 O 3 MWs, and thus may push forward their future applications.
materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
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