Solar-Blind Photodetector Based on Single Crystal Ga 2 O 3 Film Prepared by a Unique Ion-Cutting Process
Qinghua Ren,Wenhui Xu,Zhenghao Shen,Tiangui You,Qiang Liu,Chenhe Liu,Lantian Zhao,Lingli Chen,Wenjie Yu
DOI: https://doi.org/10.1021/acsaelm.0c00990
IF: 4.494
2020-12-28
ACS Applied Electronic Materials
Abstract:A solar-blind photodetector based on single crystal β-Ga<sub>2</sub>O<sub>3</sub> thin film transferred on a SiC substrate with an Al<sub>2</sub>O<sub>3</sub> buffer layer was prepared by a unique ion-cutting process. The structure and micromorphology of the transferred single crystal Ga<sub>2</sub>O<sub>3</sub> film was characterized by X-ray diffraction, X-ray photoelectron spectroscopy, and scanning electron microscopy, respectively. Then, a photodetector with a metal–semiconductor–metal (MSM) structure was fabricated. The photodetector performance of the MSM photodetector cells based on the ion-cutting single crystal Ga<sub>2</sub>O<sub>3</sub> thin film reveals an excellent solar-blind photodetector performance such as high spectra selectivity, extremely low dark current (28.7 pA at 10 V), high photocurrent (27.4 nA at 10 V), high sensitivity to 254 nm UV light with a photocurrent-to-dark current ratio of 953, relatively fast response time, and excellent stability. Furthermore, the inner mechanism was systematically discussed. This work not only paves a way to fabricate high-performance photodetectors based on single crystal semiconductor films but also opens up the opportunities of Ga<sub>2</sub>O<sub>3</sub> single crystal film for a variety of photonic and electronic applications in optical positioning, tracking, imaging, and communications.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaelm.0c00990?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaelm.0c00990</a>.Photograph of the wafer-scale Ga<sub>2</sub>O<sub>3</sub> film transferred on the Al<sub>2</sub>O<sub>3</sub>/SiC substrate; AFM images of the original Ga<sub>2</sub>O<sub>3</sub> wafer before and after ion implantation; microscopy images of the MSM photodetector arrays based on ion-cutting Ga<sub>2</sub>O<sub>3</sub> film and corresponding enlarged one device; spectral response for the MSM photodetector arrays based on ion-cutting Ga<sub>2</sub>O<sub>3</sub> film on the Al<sub>2</sub>O<sub>3</sub>/SiC substrate (<a class="ext-link" href="/doi/suppl/10.1021/acsaelm.0c00990/suppl_file/el0c00990_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,engineering, electrical & electronic