Abstract:Solar-blind ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention in the environmental, industrial, military, and biological fields. As a representative III-nitride material, AlGaN alloys have broad development prospects in the field of solar-blind detection due to their superior properties, such as tunable wide bandgaps for intrinsic UV detection. In recent decades, a variety of AlGaN-based PDs have been developed to achieve high-precision solar-blind UV detection. As integrated optoelectronic technology advances, AlGaN-based focal plane arrays (FPAs) are manufactured and exhibit outstanding solar-blind imaging capability. Considering the rapid development of AlGaN detection techniques, this paper comprehensively reviews the progress on AlGaN-based solar-blind UV PDs and FPAs. First, the basic physical properties of AlGaN are presented. The epitaxy and p-type doping problems of AlGaN alloys are then discussed. Diverse PDs, including photoconductors and Schottky, metal-semiconductor-metal (MSM), p-i-n, and avalanche photodiodes (APDs), are demonstrated, and the physical mechanisms are analyzed to improve device performance. Additionally, this paper summarizes imaging technologies used with AlGaN FPAs in recent years. Benefiting from the development of AlGaN materials and optoelectronic devices, solar-blind UV detection technology is greeted with significant revolutions. Summarizing recent advances in the processing and properties of AlGaN-based solar-blind UV PDs and FPAs as well as AlGaN growth and doping techniques.

Excellent Wavelength Selectivity of p-AlGaN/n-Ga 2 O 3 Solar-Blind UVC PD

Excellent Wavelength Selectivity of P-Algan/n-ga2o3 Solar-Blind UVC PD.

Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

High Quantum Efficiency Back-Illuminated AlGaN-Based Solar-Blind Ultraviolet P—i—n Photodetectors

Polarization-Assisted AlGaN Heterostructure-Based Solar-Blind Ultraviolet MSM Photodetectors with Enhanced Performance

Solar-blind UV photodetectors based on α-Ga2O3 prepared by a two-step hydrothermal method

Author Correction: Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

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Highly Sensitive Narrowband AlGaN Solar Blind Ultraviolet Photodetectors using Polarization Induced Heterojunction Barrier

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Ultrahigh-Performance Solar-Blind Photodetector Based on $\alpha$ -Phase- Dominated Ga 2 O 3 Film with Record Low Dark Current of 81 Fa

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Performance comparison of front- and back-illuminated AlGaN-based metal-semiconductor-metal solar-blind ultraviolet photodetectors