Algan-Based Solar-Blind Schottky Photodetectors Fabricated On Aln/Sapphire Template

Sang Li-Wen,Qin Zhi-Xin,Longbin B. Cen,Bo Shen,Zhang Guo-Yi,Li Shu-Ping,Chen Hang-Yang,Liu Da-Yi,Kang Jun-Yong,Cheng Cai-Jing,Zhao Hong-Yan,Lu Zheng-Xiong,Ding Jia-Xin,Lan Zhao,Si Jun-Jie,Sun Wei-Guo,桑立雯,秦志新,岑龙斌,沈波,张国义,李书平,陈航洋,刘达艺,康俊勇,成彩晶
DOI: https://doi.org/10.1088/0256-307X/25/1/070
2008-01-01
Chinese Physics Letters
Abstract:We report AlGaN-based back-illuminated solar-blind Schottky-type ultraviolet photodetectors with the cutoff-wavelength from 280nm to 292nm without bias. The devices show low dark current of 2.1 x 10(-6) A/cm(2) at the reverse bias of 5 V. The specific detectivity D* is estimated to be 3.3 x 10(12) cmHz(1/2)W(-1). To guarantee the performance of the photodetectors, the optimization of AlGaN growth and annealing condition for Schottky contacts were performed. The results show that high-temperature annealing method for Ni/Pt Schottky contacts is effective for the reduction of leakage current.
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