Abstract:The high-gain photomultiplier tube (PMT) is the most popular method to detect weak ultra-violet signals which attenuate quickly in atmosphere, although the vacuum tube makes it fragile and difficult to integrate. To overcome the disadvantage of PMT, an AlN/GaN periodically–stacked-structure (PSS) avalanche photodiode (APD) has been proposed, finally achieving good quality of high gain and low excessive noise. As there is a deep г valley only in the conduction band of both GaN and AlN, the electron transfers suffering less scattering and thus becomes easier to obtain the threshold of ionization impact. Because of unipolar ionization in the PSS APD, it works in linear mode. Four prototype devices of 5-period, 10-period, 15-period, and 20-period were fabricated to verify that the gain of APD increases exponentially with period number. And in 20-period device, a recorded high and stable gain of 104 was achieved under constant bias. In addition, it is proved both experimentally and theoretically, that temperature stability on gain is significantly improved in PSS APD. And it is found that the resonant enhancement in interfacial ionization may bring significant enhancement of electron ionization performance. To make further progress in PSS APD, the device structure is investigated by simulation. Both the gain and temperature stability are optimized alternatively by a proper design of periodical thickness and AlN layer occupancy.

AlGaN Ultraviolet Avalanche Photodiodes Based on a Triple-Mesa Structure

Al0.1Ga0.9N P-I-n Ultraviolet Avalanche Photodiodes with Suppressed Surface Leakage Current and Uniform Avalanche Breakdown.

Al0.1Ga0.9N P-I-n Ultraviolet Avalanche Photodiodes with Avalanche Gain over 106

Ionization-Enhanced AlGaN Heterostructure Avalanche Photodiodes

High-Gain N-Face AlGaN Solar-Blind Avalanche Photodiodes Using a Heterostructure As Separate Absorption and Multiplication Regions

High-Performance Al0.1Ga0.9N P-I-n Ultraviolet Avalanche Photodiodes with Ultra-Shallow Bevel Edge Terminations

High-Gain AlGaN Solar-Blind Avalanche Photodiodes

Metal–Semiconductor–Metal Ultraviolet Avalanche Photodiodes Fabricated on Bulk GaN Substrate

Unipolar Carrier Multiplication High-Gain and Low-Noise AlGaN Ultraviolet Avalanche Photodiode with Periodically Stacked Structure

Enhanced Front-Illuminated P-I-p-i-n GaN/AlGaN Ultraviolet Avalanche Photodiodes

An Improved Design for AlGaN Solar-Blind Avalanche Photodiodes with Enhanced Avalanche Ionization

Performance Modulation for Back-Illuminated AlGaN Ultraviolet Avalanche Photodiodes Based on Multiplication Scaling

An Improved Design for Solar-Blind AlGaN Avalanche Photodiodes

Fine Control of the Electric Field Distribution in the Heterostructure Multiplication Region of AlGaN Avalanche Photodiodes

Observation of photoelectric-induced microplasma avalanche breakdown in AlGaN ultraviolet photodiode with separate absorption and multiplication structure

Theoretical Analysis for AlGaN Avalanche Photodiodes with Mesa and Field Plate Structure*

AlGaN Solar‐blind APD with Low Breakdown Voltage

A Gan P-I-P-I-N Ultraviolet Avalanche Photodiode

Study on AlGaN P-I-N-I-N solar-blind avalanche photodiodes with Al 0.45 Ga 0.55 N multiplication layer

Ultra-violet Avalanche Photodiode Based on AlN/GaN Periodically-Stacked-structure

Al 0.4 Ga 0.6 N/Al 0.15 Ga 0.85 N Separate Absorption and Multiplication Solar-Blind Avalanche Photodiodes with a One-Dimensional Photonic Crystal Filter