Abstract:An avalanche photodiode (APD) is a widely used device, especially in weak light detection systems like fiber optic detection. InAlAs is suitable for the fabrication of multiplication and charge layers, and has drawn more and more attention due to its low excess noise factor and large bandgap. However, the use of InAlAs as a charge layer also poses significant problems, especially in the implementation of p-type doping. In this work, we have achieved carbon-doped p-InAlAs epitaxial layers with adjustable doping concentrations by tailoring the growth parameters through a metalorganic chemical vapor deposition system. Moreover, four InGaAs/InAlAs avalanche photodiodes with a structure of a separated i-InGaAs absorption layer, p-InAlGaAs grade layer, p-InAlAs charge layer, and i-InAlAs multiplication layer (SAGCM) were prepared by tailoring the doping concentration of the p-InAlAs charge layer. When the doping concentration of the p-InAlAs charge layer is 4.13 × 10 17 cm −3 , the fabricated photodiode exhibits avalanche multiplication characteristics. The device at a doping concentration of 4.13 × 10 17 cm −3 for the p-InAlAs charge layer has good photoelectric performance, with a responsivity as high as 12.19 A/W and a multiplication factor as high as 16 at 31.9 V measured at 300 K. By analyzing the electric field distribution within the device under different doping concentrations of the p-InAlAs charge layer, we believe that the key to good device performance lies in the appropriate doping concentration of the p-InAlAs charge layer. Our work provides some ideas for realizing an APD device with high performance and low breakdown voltage.

Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si avalanche photodiodes.

Tuning Performance Parameters of Ge-on-Si Avalanche Photodetector, Part II: Large Bias Operation

High-Gain High-Sensitivity Resonant Ge/Si Apd Photodetectors

Equivalent Circuit Model of a Waveguide‐type Ge/Si Avalanche Photodetector

Resonant Si/Ge avalanche photodiode with an ultrahigh gain bandwidth product

Simple Matrix-Method Modeling for Avalanche Photodetectors with Arbitrary Layer Structures and Absorption/Multiplication Coefficients

Equivalent Circuit Model of a Ge/Si Avalanche Photodiode

The characterization of normal incidence Ge/Si avalanche photodiodes (APDs) at low temperatures

High-performance waveguide Ge/Si avalanche photodiode with a lateral separate-absorption-charge-multiplication structure

Monolithic Germanium/Silicon Photodetectors with Decoupled Structures: Resonant Apds and Utc Photodiodes

Monolithic Ge/Si avalanche photodiodes

Derivation of the Small Signal Response and Equivalent Circuit Model for a Separate Absorption and Multiplication Layer Avalanche Photodetector

4H-Sic Ultraviolet Avalanche Photodiodes with Small Gain Slope and Enhanced Fill Factor

High-speed waveguide Ge/Si avalanche photodiode with a gain-bandwidth product of 615 GHz

InGaAs/InAlAs avalanche photodiodes with a high responsivity and multiplication factor using carbon-doped p-InAlAs as the charge layer

4H-Sic SACM Avalanche Photodiode with Low Breakdown Voltage and High UV Detection Efficiency

Surface-normal illuminated pseudo-planar Ge-on-Si avalanche photodiodes with high gain and low noise

An Equivalent Circuit Model for Separate Absorption Grading Charge Multiplication Avalanche Photodiode

Geiger-Mode Operation 4H-SiC Recessed-Window Avalanche Photodiodes Fabricated by N Ion Implantation

Avalanche Mechanism Analysis of 4H-Sic N-I-p and P-I-n Avalanche Photodiodes Working in Geiger Mode

Passive Quenching Electronics for Geiger Mode 4H-Sic Avalanche Photodiodes