Abstract:The carrier multiplication phenomenon involves hot carriers, which gain kinetic energy while accelerating to equilibrium with the established avalanching electric fields, and is typically explained via the local avalanche model. This work presents two vertical Ge-on-Si avalanche photodetectors fabricated in a separate absorption, charge, and multiplication configuration. Uniformity in materials, doping densities, and device dimensions is maintained, except for the multiplication width, which is used as a control parameter to manipulate avalanching fields under identical electric biasing and illumination schemes. Nonlocal carrier multiplication model is implemented during analysis of the extracted current-voltage signatures under small and large reverse biasing arrangements. For such an APD characterized by thinner multiplication region (W-m=0.1 mu m), reduced linear and Geiger-mode multiplication regimes are perceived to be at play, outperforming the device having thicker multiplication region in almost all related figures of merit, e.g., responsivity (22.58 /W), photo-to-dark current ratio (similar to 10(5)), normalized photo-to-dark current ratio (2.5x 10(9) W-1) , specific detectivity (7.45x 10(12)Jones) , and noise equivalent power (similar to 2.42x 10(-15) W/root Hz) . The enhanced performance characteristics are due to excessively strong avalanching fields, reduced thermal charge density, and negligible dead space compared to its counterpart characterized by thicker multiplication width.

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Monolithic Ge/Si avalanche photodiodes

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Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si avalanche photodiodes.

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High-efficiency GeSn/Ge Multiple-Quantum-well Photodetectors with Photon-Trapping Microstructures Operating at 2 Μm.

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High-Performance Waveguide-Integrated Ge/Si Avalanche Photodetector with Lateral Multiplication Region

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Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Photonic crystal enabled manipulation of optical and electric field in germanium avalanche photodetectors

Design and Optimization of High-Responsivity High-Speed Ge/Si Avalanche Photodiode in the C+L Band