Abstract:With the rapid development of 5 G communications, artificial intelligence, the Internet of Things and other fields, the increasing demand for data transmission in communication networks has resulted in optical interconnection gradually replacing traditional electrical interconnection in communication. As one of the core devices, the research and development of silicon-based photodetectors has garnered significant attention. Particularly, the advancement of germanium photodetectors (Ge PDs) holds crucial research significance for both academia and industry. Recently, a variety of high-performance photodetectors based on various photoelectric structures, emerging technologies and physical effects have been demonstrated on silicon photonic platforms. In this review, the research progress of Ge PDs is summarized, and the key technologies and processes in the latest development are analyzed. Firstly, the basic principles and performance of photodetectors are briefly introduced. Secondly, the key technology and basic structure of silicon and Ge PD are discussed. The development history of Ge PDs is then reviewed, and new mechanism design and performance improvement technologies are discussed. Finally, the current research frontiers and hotspots of high-performance Ge PDs are summarized, and the future development trends are discussed. It is hoped that this review will be helpful for readers to gain more insights into the latest advancements in high-performance photodetectors in silicon photonics and contribute to further development.

Recent Advances In Ge/Si Pin And Apd Photodetectors

GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates

Monolithic Germanium/Silicon Photodetectors with Decoupled Structures: Resonant Apds and Utc Photodiodes

A Review on the Recent Progress of Silicon‐on‐Insulator‐Based Photodetectors

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

High-Gain High-Sensitivity Resonant Ge/Si Apd Photodetectors

High-performance Ge Photodetectors on Silicon Photonics Platform for Optical Interconnect

Monolithic Ge/Si avalanche photodiodes

High-efficiency Normal-Incidence Vertical P-I-n Photodetectors on a Germanium-on-insulator Platform

High performance planar germanium-on-silicon single-photon avalanche diode detectors

High Performance p-i-n Photodetectors on Ge-on-Insulator Platform

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Design and Optimization of High-Responsivity High-Speed Ge/Si Avalanche Photodiode in the C+L Band

Resonant Si/Ge avalanche photodiode with an ultrahigh gain bandwidth product

High-efficiency GeSn/Ge Multiple-Quantum-well Photodetectors with Photon-Trapping Microstructures Operating at 2 Μm.

Surface-normal illuminated pseudo-planar Ge-on-Si avalanche photodiodes with high gain and low noise

Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

Tuning Performance Parameters of Ge-on-Si Avalanche Photodetector, Part II: Large Bias Operation

Interface State Calculation of the Wafer-Bonded Ge/Si Single-Photon Avalanche Photodiode in Geiger Mode

Avalanche Photodiodes and Silicon Photomultipliers of Non-Planar Designs

Extended-SWIR High-Speed All-GeSn PIN Photodetectors on Silicon