Abstract:Semiconductor nanomembranes (NMs) have emerged as an attractive nanomaterial for advanced electronic and photonic devices with attractive features such as transferability and flexibility, enabling heterogeneous integration of multi-functional components. Here, we demonstrate transferable single-layer GeSn NM resonant-cavity-enhanced photodetectors for 2 μm optical communication and multi-spectral short-wave infrared sensing/imaging applications. The single-layer strain-free GeSn NMs with an Sn concentration of 10% are released from a high-quality GeSn-on-insulator (GSOI) substrate with the defective interface regions removed. By transferring the GeSn NMs onto a predesigned distribution Bragg reflector (DBR)/Si substrate, a vertical microcavity is integrated into the device to enhance the light-matter interaction in the GeSn NM. With the integrated cavity and high-quality single-layer GeSn NM, a record responsivity of 0.51 A W-1 at 2 μm wavelength at room temperature is obtained, which is more than two orders of magnitude higher than the reported values of the multiple-layer GeSn membrane photodetectors without cavities. The potential of the device for multi-spectral photodetection is demonstrated by tuning the responsivity spectrum with different NM thicknesses. Theoretical simulations are utilized to analyze and verify the mechanisms of responsivity enhancement. The approach can be applied to other GeSn-NM-based active devices, such as electro-absorption modulators or light emitters, presenting a new pathway towards heterogeneous group-IV photonic integrated circuits with miniaturized devices.

High-efficiency GeSn/Ge Multiple-Quantum-well Photodetectors with Photon-Trapping Microstructures Operating at 2 Μm.

High-Efficiency Photo Detection at 2 Μm Realized by GeSn/Ge Multiple-Quantum-Well Photodetectors with Photon-Trapping Microstructure

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

Self-power, Multiwavelength Photodetector Based on Sn-doped Ge Quantum Dots / Hexagonal Silicon Nanowires Heterostructures

Response-Enhanced GeSn Photodetectors Realized by Photon Trapping Holes Array

High-efficiency Normal-Incidence Vertical P-I-n Photodetectors on a Germanium-on-insulator Platform

A Route toward High-Detectivity and Low-Cost Short-Wave Infrared Photodetection: GeSn/Ge Multiple-Quantum-Well Photodetectors with a Dielectric Nanohole Array Metasurface

High-speed Ge-on-GaAs Photodetector

Germanium Photodetectors with 60-Nm Absorption Coverage Extension and ∼2× Quantum Efficiency Enhancement Across L-Band

Ge0.9sn0.1 P-I-N Photodiode With Record-High Responsivity At Two-Micron-Wavelength

Waveguide-integrated PdSe2 photodetector with high responsivity and speed in the near-infrared range across the O+E+S+C bands

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Ferroelectric Enhanced Performance of a GeSn/Ge Dual-Nanowire Photodetector

Vertical field enhanced nanostructure for quantum well infrared photodetector through Germanium subwavelength arrays

Transferable single-layer GeSn nanomembrane resonant-cavity-enhanced photodetectors for 2 μm band optical communication and multi-spectral short-wave infrared sensing

High efficiency resonant-metasurface germanium photodetector with ultra-thin intrinsic layer

High-speed GeSn Resonance Cavity Enhanced Photodetectors for a 50 Gbps Si-based 2 Μm Band Communication System

High speed GeSn resonance cavity enhanced photodetectors for 50 Gbps Si-based 2 μm band communication system

UNT TRECvid: A Brighton Image Searcher Application