Abstract:Self-powered photodetection devices, which meet the requirement of environmental sustainability, are widely designed by PN heterojunctions. The design of the semiconductor/metal interface is vital in PN-junction devices. In particular, the elevated potential barrier at the metal/semiconductor interface impedes efficient carrier transport. Therefore, optimizing the semiconductor/metal interface for the PN junction, either by reducing the interface barrier or leveraging the built-in electric field within the Schottky junction, holds significant importance in enhancing the performance of PN-junction devices. In this study, an InSe/MoTe2 Type-II PN heterojunction photodetector is constructed, with graphene (Gr) and gold (Au) serving as electrodes in contact with InSe and MoTe2, respectively. Benefiting from the reduced barrier in Au/InSe interfaces and the built-in electric field formed at the InSe/MoTe2 and MoTe2/Au interfaces in the same direction, the device achieves an ultra-fast photoresponse speed of 14 mu s and an ultra-low dark current of 8.5 x 10(-14) A at zero bias. Furthermore, the device exhibits a remarkable light on/off ratio up to 10(5) and achieves broad-spectrum photodetection ranging from the visible to infrared wavelength. This research highlights the enormous potential of the Gr/InSe/MoTe2 van der Waals heterostructure in the realms of self-powered photodetection, imaging, and optical communication.

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