Abstract:Recent development on Ge$_{1-x}$Sn$_x$ nanowires with high Sn content, beyond its solid solubility limit, make them attractive for all group-IV Si-integrated infrared photonics at nanoscale. Herein, we report a chemical vapour deposition-grown high Sn-content Ge-Ge$_{0.92}$Sn$_{0.08}$ core-shell based single nanowire photodetector operating at the optical communication wavelength of 1.55 $\mu$m. The atomic concentration of Sn in nanowires has been studied using X-ray photoelectron and Raman spectroscopy data. A metal-semiconductor-metal based single nanowire photodetector, fabricated via electron beam lithography process, exhibits significant room-temperature photoresponse even at zero bias. In addition to the high-crystalline quality and identical shell composition of the nanowire, the efficient collection of photogenerated carriers under an external electric field result in the superior responsivity and photoconductive gain as high as ~70.8 A/W and ~57, respectively at an applied bias of -1.0 V. The extra-ordinary performance of the fabricated photodetector demonstrates the potential of GeSn nanowires for future Si CMOS compatible on-chip optical communication device applications.

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to develop a single germanium - tin core - shell nanowire infrared photodetector with excellent characteristics at the 1.55 - micron optical communication wavelength. Specifically, the researchers grew Ge - Ge0.92Sn0.08 core - shell nanowires with a high tin content (about 8%) by chemical vapor deposition (CVD), and constructed a single - nanowire photodetector with a metal - semiconductor - metal (MSM) structure based on this. This photodetector shows significant photo - response performance even at zero - bias voltage at room temperature, especially with a responsivity of up to about 70.8 A/W at the 1.55 - micron wavelength and a photoconductive gain of about 57. These performance indicators show that this photodetector based on GeSn core - shell nanowires has great application potential in future silicon - based complementary metal - oxide - semiconductor (CMOS) - compatible on - chip optical communication devices. The key issues mentioned in the paper also include: - How to achieve GeSn nanowires with a high tin content by controlling the growth conditions to obtain the required direct - band - gap material characteristics, which is crucial for the performance of optoelectronic devices in the short - wave infrared (SWIR) range. - How to use the core - shell structure to reduce structural defects and improve the crystallization quality of nanowires, thereby enhancing the performance of the photodetector. - How to optimize device design, such as using the MSM structure, so that the photodetector can achieve efficient photo - generated carrier collection without doping, thereby improving its responsivity and gain. By solving the above problems, this research not only promotes the application of GeSn materials in infrared optoelectronic devices, but also provides new ideas and technical solutions for developing high - performance, low - power - consumption nano - scale photodetectors in the future.

Ge-Ge$_{0.92}$Sn$_{0.08}$ core-shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication

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