Abstract:To achieve efficient optical communication and optical interconnection, it is necessary to develop and prepare detectors with high gain, low noise, high bandwidth and strong anti-electromagnetic interference. Because III-V materials cannot be integrated with CMOS process line, therefore, avalanche photodiodes (APDs) based on germanium silicon substrates are considered as detectors with large scale integration. Waveguide integrated structure can solve the contradiction between response and bandwidth in surface illuminated structure. Moreover, with germanium as the absorption region, a SACM (separate absorption charge multiplication) structure with silicon as a multiplication region has become a widely used device structure. In this work, a new vertical structure waveguide integrated structure of silicon-based germanium APD is designed with the charge layer on both sides of the germanium absorption layer, and the influence of the thickness of the multiplication layer on the dark current is simulated and tested. It shows that when the width of the multiplication layer increases, the breakdown voltage of the device increases, indicating that the electric field level of the multiplication region is similar to that of different devices at the breakdown voltage, furthermore, the simulation and experimental results are basically consistent. Under the input power of -16.8 dBm for 1310 nm incident light, the bandwidth of the designed vertical structure SACM silicon-based germanium APD can reach 25.7 GHz at 15.7 V bias. The primary responsivity of the device is up to 0.68 A/Wand the gain bandwidth product is up to 247 GHz, showing the great potential of the present Ge/Si APD for the application in future high-speed data transmission systems.

Photonic crystal enabled manipulation of optical and electric field in germanium avalanche photodetectors

A Peak Enhancement of Frequency Response of Waveguide Integrated Silicon-Based Germanium Avalanche Photodetector

High Performance Waveguide Integrated Vertical Silicon-Based Germanium Avalanche Photodetectors

Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

Si charge avalanche enhances APD sensitivity beyond 100 GHz

Vertical field enhanced nanostructure for quantum well infrared photodetector through Germanium subwavelength arrays

Ge-on-Si Avalanche Photodiodes with Photon Trapping Nanostructures for Sensing and Optical Quantum Applications

High-speed waveguide-integrated Ge/Si avalanche photodetector*

Avalanche photodiode with ultrahigh gain–bandwidth product of 1,033 GHz

Integrated High-Power Germanium Photodetectors Assisted by Light Field Manipulation.

Germanium Photodetector with Alleviated Space-Charge Effect

High-performance waveguide Ge/Si avalanche photodiode with a lateral separate-absorption-charge-multiplication structure

Waveguide-Integrated Ge/Si Avalanche Photodiode with Vertical Multiplication Region for 1310 Nm Detection

Monolithic Germanium/Silicon Photodetectors with Decoupled Structures: Resonant Apds and Utc Photodiodes

High-performance germanium avalanche photodetector for 100 Gbit/s photonics receivers.

The Simulation Analysis of a Ge / Si Waveguide Avalanche Photodetector

Planar InAlAs/InGaAs Avalanche Photodiode with 360 GHz Gain × Bandwidth Product

High-speed waveguide Ge/Si avalanche photodiode with a gain-bandwidth product of 615 GHz

Integrated High Power Germanium Photodetectors Assisted by Optical Field Manipulation.

Resonant Si/Ge avalanche photodiode with an ultrahigh gain bandwidth product

Geiger-Mode Operation 4H-SiC Recessed-Window Avalanche Photodiodes Fabricated by N Ion Implantation