A germanium on silicon uni-traveling carrier photodiode

Molly Piels,Ramaswamy Anand,John E. Bowers,Anand Ramaswamy

DOI: https://doi.org/10.1109/pho.2011.6110407

2011-10-01

Abstract:A Ge/Si uni–traveling carrier (UTC) photodetector is demonstrated for the first time. The device has a bandwidth of 15GHz and no saturation of the DC response is visible at −1V up to 28dBm input power.

What problem does this paper attempt to address?

40 GHz Si/Ge Uni-Traveling Carrier Waveguide Photodiode

Molly Piels,John E. Bowers

DOI: https://doi.org/10.1109/jlt.2014.2310780

IF: 4.7

2014-10-01

Journal of Lightwave Technology

Abstract:We report a Si/Ge waveguide-coupled uni-traveling carrier (UTC) photodiode for high-power high-speed applications. Using the uni-traveling carrier structure rather than a PIN structure, capacitance and power handling are decoupled from responsivity and transit-time, enabling a detector with a 40 GHz bandwidth and a dilute absorption profile. This photodiode had a responsivity at 1550 nm of 0.5 A/W and a −1 dB compression current of 1.5 mA at 40 GHz. A longer device with the same cross-section had a 33 GHz bandwidth, responsivity of 0.7 A/W, and −1 dB compression current of 2.1 mA at 30 GHz.

engineering, electrical & electronic,optics,telecommunications
Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

Yiding Lin,Danhao Ma,Kwang Hong Lee,Jin Zhou,Xin Guo,Hong Wang,Chuan Seng Tan,Jurgen Michel

DOI: https://doi.org/10.1109/group4.2018.8478713

2018-01-01

Abstract:A germanium (Ge) MSM photodetector is demonstrated with significantly-enhanced photo-response at the L-band and beyond, using SiNx stressor at the waveguide sidewalls created by a self-aligned dry etching method. This provides a CMOS-compatible solution for Ge detectors for broadband high-speed integrated photonic applications.
High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate

Chong Li,ChunLai Xue,Zhi Liu,Hui Cong,Buwen Cheng,Xia Guo,Wuming Liu

DOI: https://doi.org/10.48550/arXiv.1511.05593

2015-11-16

Abstract:Si/Ge uni-traveling carrier photodiodes exhibit higher output current when space-charge effects are overcome and thermal effects are suppressed, which is highly beneficial for increasing the dynamic range of various microwave photonic systems and simplifying high-bit-rate digital receivers in different applications. From the point of view of packaging, detectors with vertical-illumination configuration can be easily handled by pick-and-place tools and are a popular choice for making photo-receiver modules. However, vertical-illumination Si/Ge uni-traveling carrier (UTC) devices suffer from inter-constraint between high speed and high responsivity. Here, we report a high responsivity vertical-illumination Si/Ge UTC photodiode based on a silicon-on-insulator substrate. The maximum absorption efficiency of the devices was 2.4 times greater than the silicon substrate owing to constructive interference. The Si/Ge UTC photodiode was successfully fabricated and had a dominant responsivity at 1550 nm of 0.18 A/W, a 50% improvement even with a 25% thinner Ge absorption layer.

Instrumentation and Detectors,Materials Science,Optics
Beyond 110 GHz Uni-Traveling Carrier Photodiodes on an InP-Membrane-on-Silicon Platform

Jasper de Graaf,Xinran Zhao,Dimitrios Konstantinou,Menno van den Hout,Sander Reniers,Longfei Shen,Sjoerd van der Heide,Simon Rommel,Idelfonso Tafur Monroy,Chigo Okonkwo,Zizheng Cao,Ton Koonen,Kevin Williams,Yuqing Jiao

DOI: https://doi.org/10.1109/jstqe.2021.3110411

IF: 4.9

2022-03-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:In this work we have demonstrated a waveguide integrated uni-traveling carrier photodiode on an InP-membrane-on-silicon platform with 3 dB bandwidth beyond 110 GHz. With design optimization and an improved process, devices as small as $ ext{3} imes ext{2};mu ext{m}^2$ are successfully realized. An electrical equivalent circuit model based on measured S-parameters revealed ultra-small series resistance and junction capacitance as low as 6.5 $Omega$ and 4.4 fF, respectively, in the diodes. The model also provided insight in the photocurrent dependent characteristics in the bandwidth and resonsivity of the devices. Finally, data transmission measurements are demonstrated, showcasing the high speed telecommunication abilities of the UTC-PD.

engineering, electrical & electronic,optics,physics, applied,quantum science & technology
Monolithic Germanium/Silicon Photodetectors with Decoupled Structures: Resonant Apds and Utc Photodiodes

Daoxin Dai,Molly Piels,John E. Bowers

DOI: https://doi.org/10.1109/jstqe.2014.2322443

IF: 4.9

2014-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:The Ge/Si system is useful to realize avalanche photodetectors (APDs) operating at 1310 similar to 1550 nm because of the intrinsic advantages of complementary metal-oxide-semiconductor (CMOS) compatibility, high light-absorption of Ge, low ionization rate ratio of silicon, and high thermal conductivities of Si and Ge. With the Ge/Si system, it is convenient to realize photodetectors with decoupled structures including resonant Ge/Si APDs as well as uni-traveling carrier (UTC) photodiodes. The resonant Ge/Si APD with a separated absorption-charge-multiplication (SACM) structure, which decouples the light absorption and avalanche process, has high speed, high gain, and high gain-bandwidth product. The UTC photodiode, which decouples the light absorption and the carrier collection, is useful for high-power applications. This paper first reviews the structure and model of decoupled Ge/Si (A) PDs, particularly, the equivalent circuit models for explaining the peak enhancement of the frequency response in resonant SACM APDs. This model is also applied to UTC Ge/Si PDs developed recently for the high-power applications.
High-speed Ge-on-GaAs Photodetector

Linze Li,Rui Pan,Zhiyang Xie,Yao Lu,Jiaxiang Chen,Xinbo Zou,Ziyuan Yuan,Menglin Chang,Hong Lu,Baile Chen

DOI: https://doi.org/10.1364/oe.459664

IF: 3.8

2022-01-01

Optics Express

Abstract:In this work, a germanium (Ge) on gallium arsenide (GaAs) photodetector is demonstrated with the optical response from 850 nm to 1600 nm, which has potential for monolithic integration with VCSELs on GaAs platform as transceiver working beyond 900 nm. The device exhibits a responsivity of 0.35A/W, 0.39 A/W and 0.11 A/W at 1000 nm, 1310 urn and 1550 nm, respectively and dark current of 8 nA at -1 V. The 10 um diameter back-illuminated device achieves a 3-dB bandwidth of 9.3 GHz under -2 V bias. A donor-like trap at the interface between the Ge and GaAs collection layers is verified by capacitance-voltage curve and deep-level transient spectroscopy (DLTS) measurement, which impedes the depletion in GaAs collection layers. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
Modified Uni-Traveling Carrier Photodiodes Heterogeneously Integrated on Silicon-on-Insulator (SOI)

Andreas Beling,Yang Fu,Zhi Li,Huapu Pan,Qiugui Zhou,Allen Cross,Molly Piels,Jon Peters,John E. Bowers,Joe C. Campbell

DOI: https://doi.org/10.1364/iprsn.2012.im2a.2

2012-01-01

Abstract:We propose and demonstrate a novel InP-based evanescently-coupled modified uni-traveling carrier photodiode (MUTC PD) on SOI waveguide. A 100-µm long waveguide MUTC PD reaches a third-order local intercept point (IP3) of 20 dBm at 7 GHz and 10 mA.
Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

Hao Zhou,Shengqiang Xu,Shaoteng Wu,Yi-Chiau Huang,Peng Zhao,Jinchao Tong,Bongkown Son,Xin Guo,Daohua Zhang,Xiao Gong,Chuan Seng Tan

DOI: https://doi.org/10.1364/oe.409944

IF: 3.8

2020-01-01

Optics Express

Abstract:A GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode structure was proposed for simultaneously realizing high detectivity photo detection with low dark current and effective optical modulation based on the quantum confined Stark (QCSE) effect. The MQW stacks were grown on a 300-mm Ge-buffered Si substrate using reduced pressure chemical vapor deposition (RPCVD). GeSn/Ge MQW p-i-n photodiodes with varying mesa diameters were fabricated and characterized. An ultralow dark current density of 16.3 mA/cm2 at -1 V was achieved as expected due to the low threading dislocation density (TDD) in pseudomorphic GeSn layer. Owing to the ultralow dark current density and high responsivity of 0.307 A/W, a high specific detectivity of 1.37×1010 cm·Hz1/2/W was accomplished at 1,550 nm, which is comparable with commercial Ge and extended-InGaAs photodetectors. Meanwhile, the bias voltage-dependent photo response was investigated from 1,700 to 2,200 nm. The extracted effective absorption coefficient of GeSn/Ge MQW shows a QCSE behavior with electric field-dependent exciton peaks from 0.688 to 0.690 eV. An absorption ratio of 1.81 under -2 V was achieved at 2 μm, which shows early promise for effective optical modulation. The high frequency response was calculated theoretically, and the predicted 3-dB bandwidth for the photodiode with a mesa diameter of 30 μm could reach 12 GHz at -2 V.
A Compact Evanescently-Coupled Germanium Pin Waveguide Photodetector

Zhijuan Tu,Kaibo Liu,Huaxiang Yi,Runxi Zhou,Xingjun Wang,Zhiping Zhou,Zhangyuan Chen

DOI: https://doi.org/10.1117/12.2001221

2012-01-01

Abstract:A compact 1.6x10 mu m(2) germanium pin waveguide photodetector was demonstrated on a Silicon-on-Insulator substrate. The dark current of the photodetector was measured to be 0.66 mu A at -1V bias voltage, which is much lower than recently reported. The photodetector exhibited a 3-dB bandwidth of 20GHz at the wavelength of 1.55 mu m. A clear open eye diagram at 10Gb/s was also obtained.
High efficiency resonant-metasurface germanium photodetector with ultra-thin intrinsic layer

Jinwen Song,Shuai Yuan,Jinsong Xia

DOI: https://doi.org/10.48550/arXiv.1904.05744

2019-04-09

Abstract:Photodetectors at telecommunications-band with high efficiency and high speed are becoming increasingly important as the booming of big data, 5G, internet of things, cloud computing, artificial intelligence and relevent applications. Silicon-based Germanium photodetectors exhibit great potential in reducing the cost and power dissipation, due to its compatibility of monolithic integration with signal-processing electronics. We report the first demonstration of normal incident resonant-metasurface germanium photodetector, to address the trade-off between quantum efficiency, bandwidth and wavelength coverage for free-space detectors. With an ultra-thin intrinsic layer thickness of 350 nm, a high external quantum efficiency of more than 60% and clearly open eyes at the speed of 20 Gbps are achieved, for a 30 {\mu}m-diameter device. The photodetector employs multiple trapped-mode resonances to enhance the localized electromagnetic field, which not only enhances the external quantum efficiency by more than 300% at 1550 nm, but also extends to the whole C band. Further simulation and measurement with small incident spot size show the feasibility to achieve >50 GHz 3 dB bandwidth by simply reducing the mesa size, with minor sacrifice of the enhanced absorption. This work paves the way for the future development of low-cost, high efficiency normal incident germanium photodetectors operating at data rates of 50 Gbps or higher.

Instrumentation and Detectors,Optics
High-efficiency GeSn/Ge Multiple-Quantum-well Photodetectors with Photon-Trapping Microstructures Operating at 2 Μm.

Hao Zhou,Shengqiang Xu,Yiding Lin,Yi-Chiau Huang,Bongkwon Son,Qimiao Chen,Xin Guo,Kwang Hong Lee,Simon Chun-Kiat Goh,Xiao Gong,Chuan Seng Tan

DOI: https://doi.org/10.1364/oe.389378

IF: 3.8

2020-01-01

Optics Express

Abstract:We introduced photon-trapping microstructures into GeSn-based photodetectors for the first time, and achieved high-efficiency photo detection at 2 µm with a responsivity of 0.11 A/W. The demonstration was realized by a GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode on a GeOI architecture. Compared with the non-photon-trapping counterparts, the patterning and etching of photon-trapping microstructure can be processed in the same step with mesa structure at no additional cost. A four-fold enhancement of photo response was achieved at 2 µm. Although the incorporation of photo-trapping microstructure degrades the dark current density which increases from 31.5 to 45.2 mA/cm2 at −1 V, it benefits an improved 3-dB bandwidth of 2.7 GHz at bias voltage at −5 V. The optical performance of GeSn/Ge MQW photon-trapping photodetector manifests its great potential as a candidate for efficient 2 µm communication. Additionally, the underlying GeOI platform enables its feasibility of monolithic integration with other photonic components such as waveguide, modulator and (de)multiplexer for optoelectronic integrated circuits (OEICs) operating at 2 µm.
High-Power Ge/Si Waveguide Photodetector

Hengzhen Cao,Yuluan Xiang,Weichao Sun,Jin Xie,Jingshu Guo,Zejie Yu,Liu,Yaocheng Shi,Daoxin Dai

DOI: https://doi.org/10.1021/acsphotonics.4c00173

IF: 7

2024-01-01

ACS Photonics

Abstract:A lateral germanium/silicon waveguide photodetector with a side-coupling structure is proposed and realized. For the present photodetector, the input light is split into four channels, which are gradually coupled into two parallel germanium waveguides by adiabatic side-coupling. In this way, uniform optical field distribution is achieved and the space-charge effect is eliminated greatly even with high optical power. The experimental results show that the responsivity is still as high as 0.68 A/W even for an input optical power of 28 mW and the saturation photocurrent is more than 19.5 mA. The present photodetector features a broad bandwidth of >40 GHz for detecting low optical power, while the bandwidth is still more than 20 GHz for the input optical power of 12.4 mW (the output current is 10.2 mA). The open eye-diagrams for receiving the 25 and 50 Gbps data are demonstrated with the photocurrents of 16 and 8.5 mA, respectively. The present side-coupling Ge/Si photodetector exhibits excellent performances for high-power detection compared with the conventional one.
Silicon-based High-Power Traveling Wave Photodetector with Inductive Gain Peaking.

Zhujun Wei,Hui Yu,Zhilei Fu,Penghui Xia,Qiang Zhang,Nannan Ning,Qikai Huang,Yuehai Wang,Jianyi Yang

DOI: https://doi.org/10.1364/oe.476218

IF: 3.8

2022-01-01

Optics Express

Abstract:We demonstrate Ge/Si high-power and high-speed distributed traveling wave photodetectors (TWPD) by using the inductive gain peaking technique. Input terminals of TW electrodes are open to enhance RF output efficiencies to output loads. Furthermore, optimized on-chip spiral inductors are incorporated at output terminals of TW electrodes to alleviate bandwidth degradations caused by the absences of matching impedances. A comprehensive equivalent circuit model is developed to calculate the frequency response of this scheme. It is used to optimize the design, and then is validated by measurement results. After inducing on-chip inductors, the bandwidths of 4-stage and 8-stage TWPDs are improved from 32 to 44 GHz and 16 to 24 GHz, respectively. Maximum RF output powers of 4-stage and 8-stage TWPDs with on-chip inductors are measured to be 5.7 dBm and 9.4 dBm at 20 GHz, respectively.
High-speed, zero-biased silicon-germanium photodetector

Marc de Cea,Derek Van Orden,John Fini,Mark Wade,Rajeev J. Ram

DOI: https://doi.org/10.1063/5.0047037

IF: 5.6

2021-04-01

APL Photonics

Abstract:We report high-speed performance for a photodetector operating at zero bias—with zero dark current and zero DC electrical power dissipation. Photocurrent generation is achieved through phonon-assisted absorption in a silicon microring resonator embedded with silicon-germanium, resulting in a responsivity of 0.35 and 0.043 A/W at wavelengths around 1180 and 1270 nm, respectively. We measure a 3 dB bandwidth of 14 GHz, the fastest reported to date for a zero-biased ring-resonant photodetector and which represents a 7× improvement with respect to previous work. We explore the source of such improvement through TCAD simulations and conclude that the optimization of the doping profile significantly decreases the effective carrier lifetime by limiting the impact of the photogenerated carriers drifting into the outer circumference of the resonator, with a low electric field. Using experimental data, we also extract both the free carrier and the phonon-assisted silicon-germanium absorption coefficient, showing good agreement with literature data. High-speed operation at temperatures up to 150 °C is also demonstrated.

optics,physics, applied
High Speed 1550 nm Indium Gallium Arsenide-Indium Phosphide Photodetector

Erik Perez,Ronald LaComb,Faquir Jain

DOI: https://doi.org/10.1142/s0129156423500131

2023-07-22

International Journal of High Speed Electronics and Systems

Abstract:This paper presents preliminary results of a high speed 1550 nm indium gallium arsenide (InGaAs)-based mesa-type modified uni-traveling carrier photodiode (M-UTC-PD) structure. Conventional UTC-PD refers to P-I-N type photodiodes which selectively use electrons as active carriers. Photons absorbed in the relatively thin P-type absorber create minority carriers which are field accelerated toward a depleted collector thereby establishing high velocity ballistic transport, making these structures applicable for high speed applications. The M-UTC-PD structure presented uses spatially tailored P-type absorber regions to limit minority carrier generation both in the lateral and axial dimensions. Utilizing an otherwise conventional UTC-PD epitaxial structure where the top P-type layers are undoped, the spatially tailored P-type regions are defined by closed ampoule Zinc diffusion techniques. The M-UTC-PD structure presented utilizes a series of nested p-doped rings within a mesa structure to limit dark current and reduce overall capacitance to improve high speed operation. Two photodiode structures will be investigated for this research project, a conventional UTC-PD structure and a modified structure, utilizing similar device designs, epitaxial designs and fabrication processes. The conventional structure will be utilized for fabrication process development, verification of epi quality and development of rapid prototyping approach toward chip-based testing and subsequent high speed RF testing procedures. Conventional UTC-PD device results will be used as a comparison to quantify the performance of the M-UTC-PD structure utilizing Zn-doped defined p-type absorber regions. Results are given for chip tests of UTC-PD chips verifying epitaxial quality and fabrication process, subsequent testing of packaged devices and RF analysis remains. Process development of the Zn-doped devices is underway, once completed, these devices will be compared to the base design to quantify performance enhancement associated with the modified design.
Study on the Saturation Characteristics of High-Speed Uni-Traveling-carrier Photodiodes Based on Field Screening Analysis

Tuo Shi,Bing Xiong,Changzheng Sun,Yi Luo

DOI: https://doi.org/10.3788/col201109.082302

2011-01-01

Abstract:A back-illuminated mesa-structure InGaAs/InP charge-compensated uni-traveling-carrier (UTC) photodiode (PD) is fabricated, and its saturation characteristics are investigated. The responsivity of the 40-\mu m-diameter PD is as high as 0.83 A/W, and the direct current (DC) saturation current is up to 275 mA. The 1-dB compression point at the 3-dB cutoff frequency of 9 GHz is measured to be 100 mA, corresponding to an output radio frequency (RF) power of up to 20.1 dBm. According to the calculated electric field distributions in the depleted region under both DC and alternating current (AC) conditions, the saturation of the UTC-PD is caused by complete field screening at high optical injection levels.
103 GHz germanium-on-silicon photodiode enabled by an optimized U-shaped electrode

Yang Shi,Xiang Li,Mingjie Zou,Yu Yu,Xinliang Zhang

DOI: https://doi.org/10.1364/prj.495958

IF: 7.6

2023-12-07

Photonics Research

Abstract:Yang Shi, Xiang Li, Mingjie Zou, Yu Yu, Xinliang Zhang High-performance germanium photodiodes are crucial components in silicon photonic integrated circuits for large-capacity data ... [Photon. Res. 12, 1-6 (2024)]

optics
High-Power, Wide-Bandwidth Modified Uni-Traveling-Carrier Photodiodes with an Optimized Depletion Region

Jin Li,Bing Xiong,Yi Luo,Changzheng Sun,Zhibiao Hao,Jian Wang,Yanjun Han,Lai Wang,Hongtao Li

DOI: https://doi.org/10.7567/apex.9.052203

IF: 2.819

2016-01-01

Applied Physics Express

Abstract:A modified uni-traveling-carrier photodiode (MUTC-PD) with an optimized depletion region is fabricated and its saturation characteristics are investigated. The space-charge effect is effectively suppressed by inserting a carefully designed cliff layer in the middle of the depletion region. The 22-µm-diameter device exhibits a bandwidth of 28 GHz. Compared with our previous work, the saturation photocurrent of the novel device is increased from 55 to 99 mA, and the corresponding RF power is increased from 15.5 to 20.1 dBm. Furthermore, a 12-µm-diameter device with a bandwidth of 50 GHz is demonstrated, together with a saturation photocurrent of 61 mA, corresponding to an RF power of 15.3 dBm.
Waveguide-integrated PdSe2 photodetector with high responsivity and speed in the near-infrared range across the O+E+S+C bands

Jianghong Wu,Hui Ma,Chuyu Zhong,Maoliang Wei,Chunlei Sun,Yuting Ye,Yan Xu,Bo Tang,Ye Luo,Boshu Sun,Jialing Jian,Hao Dai,Hongtao Lin,Lan Li

DOI: https://doi.org/10.21203/rs.3.rs-1399761/v1

2022-01-01

Abstract:Abstract Hybrid integration of two-dimensional (2D) materials on a silicon photonic platform enables diverse exploration of novel active functions and significant improvement in device performance for next-generation silicon integrated photonic circuits. 2D transition metal dichalcogenide materials (TMDCs) have attracted extensive attention for photodetectors, but developing high-performance waveguide-integrated photodetectors based on conventionally investigated 2D TMDCs at the telecom C-band is still a big challenge because of their large optical bandgap and slow carrier mobility. Here, we propose PdSe2, a new type of 2D TMDC, to be integrated with silicon photonic components for on-chip photodetection with high responsivity and speed in the datacom and telecom optical bands ranging from the O-band to the C-band. The obtained waveguide-integrated photodetectors show a high responsivity of 1190.2 mA W−1 at 1550 nm and a low noise-equivalent power of 4.0 pW Hz-0.5 at 5V. The 3 dB bandwidth reaches up to 1.5 GHz, and the measured data rate is 2.5 Gbit s−1. The achieved PdSe2 photodetectors provide new insights to explore the integration of novel 2D TMDCs with silicon photonics and demonstrate the potential of integrated photodetectors for applications in diverse areas, including optical communications, on-chip spectroscopy, and sensing.
Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

Hao Zhou,Qimiao Chen,Shaoteng Wu,Lin Zhang,Xin Guo,Bongkwon Son,Chuan Seng Tan

DOI: https://doi.org/10.1364/oe.449326

IF: 3.8

2022-01-01

Optics Express

Abstract:Germanium (Ge) lateral p-i-n photodetectors with grating and hole-array structures were fabricated on a Ge-on-insulator (GOI) platform. Owing to the low threading dislocation density (TDD) in the transferred Ge layer, a low dark current of 0.279 µA was achieved at -1 V. The grating structure enhances the optical absorption by guiding the lateral propagation of normal incident light, contributing to a 3× improved responsivity at 1,550 nm. Compared with the grating structure, the hole-array structure not only guides the lateral modes but also benefits the vertical resonance modes. A 4.5× higher responsivity of 0.188 A/W at 1,550 nm was achieved on the 260 nm Ge absorptive layer. In addition, both the grating and the hole-array structure attribute to a 2× and a 1.6× enhanced 3dB bandwidth at -5 V due to significantly reduced capacitance. The planar configuration of p-i-n photodiodes is favorable for large-scale monolithic integration. The incorporated surface structures offer promising approaches to reinforce the responsivity and bandwidth simultaneously, paving the way for the development of high-performance Ge photodetectors on silicon substrate.

A germanium on silicon uni-traveling carrier photodiode

40 GHz Si/Ge Uni-Traveling Carrier Waveguide Photodiode

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate

Beyond 110 GHz Uni-Traveling Carrier Photodiodes on an InP-Membrane-on-Silicon Platform

Monolithic Germanium/Silicon Photodetectors with Decoupled Structures: Resonant Apds and Utc Photodiodes

High-speed Ge-on-GaAs Photodetector

Modified Uni-Traveling Carrier Photodiodes Heterogeneously Integrated on Silicon-on-Insulator (SOI)

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

A Compact Evanescently-Coupled Germanium Pin Waveguide Photodetector

High efficiency resonant-metasurface germanium photodetector with ultra-thin intrinsic layer

High-efficiency GeSn/Ge Multiple-Quantum-well Photodetectors with Photon-Trapping Microstructures Operating at 2 Μm.

High-Power Ge/Si Waveguide Photodetector

Silicon-based High-Power Traveling Wave Photodetector with Inductive Gain Peaking.

High-speed, zero-biased silicon-germanium photodetector

High Speed 1550 nm Indium Gallium Arsenide-Indium Phosphide Photodetector

Study on the Saturation Characteristics of High-Speed Uni-Traveling-carrier Photodiodes Based on Field Screening Analysis

103 GHz germanium-on-silicon photodiode enabled by an optimized U-shaped electrode

High-Power, Wide-Bandwidth Modified Uni-Traveling-Carrier Photodiodes with an Optimized Depletion Region

Waveguide-integrated PdSe2 photodetector with high responsivity and speed in the near-infrared range across the O+E+S+C bands

Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform