Abstract:Based on the nearly-ballistic optimization method, a high performance uni-traveling-carrier photodiode (UTC-PD) design scheme is proposed in this paper. The UTC-PD prepared by this scheme has high response speed, high responsivity, and large saturation output, and can alleviate the load voltage swing effect. The designed novel photodiode uses a partially depleted absorption layer with gradient doping. A thin p-type doped charge layer is inserted at the bottom of the collection layer. The internal electric field of the device is optimized to make the photogenerated electrons drift at the overshoot speed, reduce the electron transit time, make the device have high bias voltage operation ability, and therefore increase the 3 dB bandwidth and improve the saturation performance. Simulation results show that under the condition of high reverse bias voltage of 8 V, the device with an active area of 16 mu m(2) can obtain a 3 dB bandwidth exceeding 86 GHz with a responsivity of 0.17 A/W.

High-Power, Wide-Bandwidth Modified Uni-Traveling-Carrier Photodiodes with an Optimized Depletion Region

Back-illuminated Modified Uni-Traveling-carrier Photo-Diodes (Mutc-Pds) with 3-Db Bandwidth over 40 GHz

150 GHz Bandwidth Modified Uni-traveling-carrier Photodiodes with 2.45 Dbm Saturation Output Power

Bandwidth improvement of high power uni-traveling-carrier photodiodes by reducing the series resistance and capacitance

Ultrafast MUTC Photodiodes over 200 GHz with High Saturation Power.

Depletion Region Optimization in UTC Photodiodes for High Speed and High Power Performance

High-Saturation-Current Modified Uni-Traveling-Carrier Photodiode With Cliff Layer

Bandwidth Optimization and Fabrication of High-Power MUTC-PD

Modified Uni-Traveling-Carrier Photodetector with Its Optimized Cliff Layer

Ultrafast MUTC Photodiodes with 230 GHz Bandwidth

190 GHz Bandwidth Modified Uni-Traveling Carrier Photodiodes with High Saturation Power.

High-Power High-Linearity Modified Uni-Traveling Carrier Photodiodes

Ultrafast Dual-Drifting Layer Uni-Traveling Carrier Photodiode with High Saturation Current

Back-To-Back Utc-Pds with High Responsivity, High Saturation Current and Wide Bandwidth

D-Band MUTC Photodiodes with Flat Frequency Response

Double-cliff-layer Uni-Traveling-carrier Photodiode with High Responsivity and Ultra-Broad Bandwidth

Ultra-fast Waveguide MUTC Photodiodes over 220 GHz

Design and optimization of MUTC photodiode performance under high-power operating conditions

High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode.

Comprehensive Design Method of MUTC-PD for Terahertz Applications

Nearly-Ballistic Optimization Design of High-Speed Uni-Traveling-Carrier Photodiodes