Design and optimization of MUTC photodiode performance under high-power operating conditions

Xiaowei Yang,Xiaofeng Duan,Kai Liu,Yongqing Huang

DOI: https://doi.org/10.1364/ao.537191

IF: 1.9

2024-10-03

Applied Optics

Abstract:Xiaowei Yang, Xiaofeng Duan, Kai Liu, Yongqing Huang A high-bandwidth and high-power back-illuminated modified uni-traveling-carrier photodiode (MUTC-PD) with InGaAsP/InGaAs as the main ... [Appl. Opt. 63, 7644-7651 (2024)]

optics

What problem does this paper attempt to address?

Back-illuminated Modified Uni-Traveling-carrier Photo-Diodes (Mutc-Pds) with 3-Db Bandwidth over 40 GHz

Zheng Zhen,Ran Hao,Dong Xing,Zhihong Feng,Shangzhong Jin,Erping Li

DOI: https://doi.org/10.1117/12.2585422

2020-01-01

Abstract:InP-based back-illuminated modified uni-traveling-carrier photodiodes (MUTC-PDs) with high-speed and high-responsivity are demonstrated using flip-chip technology in this letter. The partially depleted absorption layer with gradual doping and cliff layer are utilized to realize large 3-dB bandwidth. A high responsivity of 0.54 A/W with over 40 GHz large 3-dB bandwidth from a 7-mu m-diameter back-illuminated MUTC-PD is achieved. The results demonstrate that the modified design can effectively enhance the internal electric field and concentration gradient, so as to optimize the response speed of the device.
Bandwidth Optimization and Fabrication of High-Power MUTC-PD

Xuejie Wang,Yongqing Huang,Shuhu Tan,Jiawei Du,Mingxi Yang,Kai Liu,Xiaofeng Duan,Xiaomin Ren

DOI: https://doi.org/10.1109/jqe.2024.3367951

IF: 2.5

2024-03-09

IEEE Journal of Quantum Electronics

Abstract:A high-speed and high-power modified uni-traveling-carrier photodiode (MUTC-PD) is optimized and fabricated. The optimization method takes carrier transport as the core and considers the hole transport time limited bandwidth of the MUTC-PD for the first time. Taking into account the impact of the electron transport time and RC time constant on device performance, the device is simulated and fabricated. In structure epitaxy, it is proposed to use graded doping to fit Gaussian doping to reduce the epitaxial growth error. The measured bandwidth of the MUTC-PD reaches 34 GHz and the RF output power reaches 17.1 dBm with the mesa diameter of . In addition, the influence of modulation depth on high-speed and high-power performance is studied.

engineering, electrical & electronic,optics,physics, applied,quantum science & technology
Ultrafast MUTC Photodiodes over 200 GHz with High Saturation Power.

Yuxin Tian,Bing Xiong,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Lin Gan,Yi Luo

DOI: https://doi.org/10.1364/oe.491552

IF: 3.8

2023-01-01

Optics Express

Abstract:Novel back-illuminated modified uni-traveling-carrier photodiodes (MUTC-PDs) with wide bandwidth and high saturation power are demonstrated. The effect of cliff layer doping on the electric field distribution is investigated to achieve fast carrier transport. MUTC-PDs with miniaturized device diameter and low contact resistance are fabricated to improve the RC-limited bandwidth. Meanwhile, inductive peaking is implemented to further extend the bandwidth. PDs with 3-µm and 3.6-µm-diameter exhibit a ultrawide bandwidth of 230 GHz and 200 GHz, together with −4.94 dBm and −2.14 dBm saturation power at 220 GHz and 200 GHz, respectively.
Ultrafast MUTC Photodiodes with 230 GHz Bandwidth

Yuxin Tian,Bing Xiong,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Lin Gan,Yi Luo

DOI: https://doi.org/10.1109/OECC56963.2023.10209609

2023-01-01

Abstract:Novel back-illuminated modified uni-traveling-carrier photodiodes (MUTC-PDs) are designed to achieve ultrawide bandwidth. The fabricated 3-μm-diameter PDs demonstrate a 3-dB bandwidth of 230 GHz with a saturation power of −4.94 dBm @ 220 GHz.
High-Power, Wide-Bandwidth Modified Uni-Traveling-Carrier Photodiodes with an Optimized Depletion Region

Jin Li,Bing Xiong,Yi Luo,Changzheng Sun,Zhibiao Hao,Jian Wang,Yanjun Han,Lai Wang,Hongtao Li

DOI: https://doi.org/10.7567/apex.9.052203

IF: 2.819

2016-01-01

Applied Physics Express

Abstract:A modified uni-traveling-carrier photodiode (MUTC-PD) with an optimized depletion region is fabricated and its saturation characteristics are investigated. The space-charge effect is effectively suppressed by inserting a carefully designed cliff layer in the middle of the depletion region. The 22-µm-diameter device exhibits a bandwidth of 28 GHz. Compared with our previous work, the saturation photocurrent of the novel device is increased from 55 to 99 mA, and the corresponding RF power is increased from 15.5 to 20.1 dBm. Furthermore, a 12-µm-diameter device with a bandwidth of 50 GHz is demonstrated, together with a saturation photocurrent of 61 mA, corresponding to an RF power of 15.3 dBm.
150 GHz Bandwidth Modified Uni-traveling-carrier Photodiodes with 2.45 Dbm Saturation Output Power

Yuxin Tian,Bing Xiong,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Yi Luo

DOI: https://doi.org/10.1109/acp55869.2022.10088569

2022-01-01

Abstract:Back-illuminated modified uni-traveling-carrier photodiodes (MUTC-PDs) are optimized to achieve high power and wide bandwidth. The fabricated 6-μm-diameter PD demonstrates a 3-dB bandwidth of 150 GHz with a record-high saturation power of 2.45 dBm @ 150 GHz.
Bandwidth improvement of high power uni-traveling-carrier photodiodes by reducing the series resistance and capacitance

Jin Li,Bing Xiong,Chang-Zheng Sun,Yi Luo,Jian Wang,Zhi-Biao Hao,Yan-Jun Han,Lai Wang,Hong-Tao Li

DOI: https://doi.org/10.1088/1674-1056/24/7/078503

2015-06-25

Chinese Physics B

Abstract:A backside illuminated mesa-structure InGaAs/InP modified uni-traveling-carrier photodiode (MUTC-PD) with wide bandwidth and high saturation power is fabricated and investigated. The device structure is optimized to reduce the capacitance and resistance. For the 22-μm-diameter device, the maximum responsivity at 1.55 μm is 0.5 A/W, and the 3-dB cutoff frequency reaches up to 28 GHz. The output photocurrent at the 1-dB compression point is measured to be 54 mA at 25 GHz, with a corresponding output radio frequency (RF) power of up to 15.5 dBm. The saturation characteristics of the MUTC-PD are also verified by the electric field simulation, and electric field collapse is found to be the cause of the saturation phenomenon.

physics, multidisciplinary
Depletion Region Optimization in UTC Photodiodes for High Speed and High Power Performance

Jin Li,Bing Xiong,Changzheng Sun,Yi Luo,Jian Wang,Zhibiao Hao,Lai Wang,Yanjun Han,Hongtao Li

DOI: https://doi.org/10.1109/oecc.2015.7340226

2015-01-01

Abstract:Depletion region of uni-traveling-carrier photodiodes (UTC-PDs) is optimized. Wide bandwidth of 28.5 GHz and high saturation photocurrent of 38 mA at 20 GHz are achieved for a 14-μm diameter device.
High-power MUTC Photodiode with WR-8 Rectangular Waveguide Output

Yuxin Tian,Bing Xiong,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Lin Gan,Yi Luo

DOI: https://doi.org/10.1364/cleo_si.2024.sm1i.6

2024-01-01

Abstract:We present a compact modified uni-travelling-carrier (MUTC) photodiode module with WR-8 rectangular waveguide output. The packaged device exhibits a flat optoelectronic frequency response with a peak RF output power of −0.97 dBm (800 μW).
Characterization and optimization of high-power InGaAs/InP photodiodes

Huapu Pan,Andreas Beling,Hao Chen,Joe C. Campbell

DOI: https://doi.org/10.1007/s11082-008-9230-9

IF: 3

2008-01-01

Optical and Quantum Electronics

Abstract:The performance of 34-μm-diameter InGaAs/InP charge compensated modified uni-traveling carrier photodiodes (CC MUTCs) is studied using a commercial device simulator based on a drift-diffusion model. Excellent agreement has been achieved between simulations and experiments. The origin of the degradation of responsivity at high optical injection level is investigated. Parameters of the photodiode are further optimized to maximize the saturation current without sacrificing bandwidth and responsivity.
Comprehensive Design Method of MUTC-PD for Terahertz Applications

Enfei Chao,Bing Xiong,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Jiadong Yu,Yi Luo

DOI: https://doi.org/10.1364/acpc.2020.m4a.150

2020-01-01

Abstract:A novel modified uni-traveling-carrier photodiode has been carefully designed by a comprehensive design method which includes a physically-based energy-balance model and an accurate circuit model. The simulated 3-dB bandwidth reaches 180 GHz for 3-mu m-diameter device. (C) 2020 The Author(s)
Analysis of Frequency Response of High Power MUTC Photodiodes Based on Photocurrent-Dependent Equivalent Circuit Model

Jin Li,Bing Xiong,Changzheng Sun,Di Miao,Yi Luo

DOI: https://doi.org/10.1364/oe.23.021615

IF: 3.8

2015-01-01

Optics Express

Abstract:A back-illuminated mesa-structure InGaAs/InP modified uni-traveling-carrier photodiode (MUTC-PD) is fabricated and its frequency response is investigated. A bandwidth of 40 GHz and a saturation photocurrent up to 33 mA are demonstrated. A photocurrent-dependent equivalent circuit model is proposed to analyze the frequency response of the high power MUTC-PDs. The influences of the space-charge screening, self-induced electric field and over-shoot effects are discussed in detail based on the model. Fitted curves obtained from the simple equivalent circuit model are found to be in good agreement with the data measured under different bias voltages and photocurrents.
D-Band MUTC Photodiodes with Flat Frequency Response

Enfei Chao,Bing Xiong,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Jiadong Yu,Yi Luo

DOI: https://doi.org/10.1109/jstqe.2021.3115488

IF: 4.9

2021-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:Novel back-illuminated modified uni-traveling- carrier photodiodes (MUTC-PDs) are reported to demonstrate wide bandwidth and high output power performance at D-band (110–170 GHz) regime. A comprehensive design model is employed to predict and tune the frequency response by incorporating coplanar waveguides (CPWs) with different inductive peaking effects. As a demonstration, 4.5-μm-diameter photodiodes with two types of CPWs are fabricated to exhibit different frequency response profiles. Both PDs exhibit a 3-dB bandwidth over 150 GHz and the measured frequency responses are in excellent agreement with simulations. Thanks to the proper design of the CPW electrodes, the two PDs exhibit an output power roll-off of only 4.3 dB and 4.8 dB from dc to 170 GHz, respectively, and high saturation performance is maintained over the broadband frequency range of 130–170 GHz.
Modified Uni-Traveling-Carrier Photodetector with Its Optimized Cliff Layer

Xiaowen Dong,Kai Liu

DOI: https://doi.org/10.3390/s24072020

2024-03-22

Abstract:We have designed the MUTC-PD with an optimized thickness of cliff layer to pre-distort the electric field at the front side of the collection layer. With the optimized MUTC-PD design, the collapse of the electric field will be greatly suppressed, and the electrons in its collection layer will gradually reach their peak velocity with the growing incident light power. Moreover, as the incident light intensity increases, the differential capacitance also declines, thus the total bandwidth grows. It will make the MUTC-PD achieve high-speed and high-power response performance simultaneously. Based on simulation, for 16μm MUTC-PD with a 70 nm cliff layer, the maximum 3 dB bandwidth at -5 V is 137 GHz, compared with 64 GHz for the MUTC-PD with a 30 nm cliff layer. The saturation RF output power is 27.4 dBm at 60 GHz.
An 850 Nm InGaAs Modified Uni-Traveling-Carrier Photodiode Enhanced by Distributed Bragg Reflector

Jian Wang,Zhipeng Dou,Guanghao Li,Xiaofeng Huang,Qian Yu,Zhibiao Hao,Bing Xiong,Changzheng Sun,Yanjun Han,Lai Wang,Hongtao Li,Lin Gan,Yi Luo

DOI: https://doi.org/10.1109/lpt.2024.3406785

IF: 2.6

2024-01-01

IEEE Photonics Technology Letters

Abstract:We report an 850 nm surface-illuminated InGaAs modified uni-travelling-carrier photodiode (MUTC-PD) with distributed Bragg reflector (DBR) bottom mirror. By adopting InGaAs as the absorber, which exhibits a higher absorption coefficient than GaAs, the absorption layer thickness can be reduced to 960 nm, so as to minimize the transit time of the photogenerated carriers. The fabricated MUTC-PD demonstrates a 3-dB bandwidth of 27.5 GHz and a responsivity of 0.51 A/W under a bias of -2 V at the wavelength of 850 nm.
High-Power High-Linearity Modified Uni-Traveling Carrier Photodiodes

A. Beling,H. Pan,H. Chen,J. C. Campbell

DOI: https://doi.org/10.1364/ipnra.2008.iwc3

2008-01-01

Abstract:We demonstrate a modified uni-traveling carrier photodiode (MUTC-PD) with a record-high third-order intercept point of 52dBm at 75mA and 300MHz. To further enhance the dynamic range we propose a monolithically integrated traveling wave MUTC-PD array.
Characterization and Optimization of InGaAs/InP Photodiodes with High Saturation Current

huapu pan,xin wang,andreas beling,hao chen,j c campbell

DOI: https://doi.org/10.1109/NUSOD.2007.4349033

2007-01-01

Abstract:The operation and performance of 34-μm-diameter InGaAs/InP modified charge compensated unitraveling carrier photodiodes (CC MUTCs) are studied utilizing a commercial device simulator. The device has a high responsivity of 0.75 A/W and saturation current of 100mA. Excellent agreement has been achieved between simulations and experiments. Parameters of the photodiode are further optimized to maximize the saturation current.
Nearly-Ballistic Optimization Design of High-Speed Uni-Traveling-Carrier Photodiodes

Zhen Zheng,Hao Ran,Xing Dong,Feng Zhihong,Jin Shangzhong

DOI: https://doi.org/10.3788/cjl202047.1006003

2020-01-01

Chinese Journal of Lasers

Abstract:Based on the nearly-ballistic optimization method, a high performance uni-traveling-carrier photodiode (UTC-PD) design scheme is proposed in this paper. The UTC-PD prepared by this scheme has high response speed, high responsivity, and large saturation output, and can alleviate the load voltage swing effect. The designed novel photodiode uses a partially depleted absorption layer with gradient doping. A thin p-type doped charge layer is inserted at the bottom of the collection layer. The internal electric field of the device is optimized to make the photogenerated electrons drift at the overshoot speed, reduce the electron transit time, make the device have high bias voltage operation ability, and therefore increase the 3 dB bandwidth and improve the saturation performance. Simulation results show that under the condition of high reverse bias voltage of 8 V, the device with an active area of 16 mu m(2) can obtain a 3 dB bandwidth exceeding 86 GHz with a responsivity of 0.17 A/W.
Automated intelligent design of modified uni-traveling carrier photodectors

Junjing Huang,Xiaofeng Duan,Kai Liu,Yongqing Huang,Xiaomin Ren

DOI: https://doi.org/10.1364/OE.521441

2024-05-20

Abstract:This paper introduces an automatic intelligent design method for the modified uni-traveling carrier photodetector (MUTC-PD). The conventional photodetector design process often relies on the numerical solution of complex nonlinear partial differential equations to simulate and optimize device performance, which is not only computationally intensive but also inefficient. To overcome this challenge, we apply the charge control principle to calculate the photodetector bandwidth, which improves the computational speed by a factor of approximately 1800 compared to the numerical solution of nonlinear partial differential equations. To further optimize the structure of the photodetector, we incorporate the Velocity Varying Climbing Particle Swarm Optimization (VVCPSO) algorithm. This is an improved algorithm based on the traditional particle swarm algorithm, which is able to quickly find the optimal solution in a complex parameter space. By applying the VVCPSO algorithm, we successfully fine-tuned the photodetector structure and obtained structural parameters with optimal performance. Our thorough verification process confirms that the proposed method is consistent with the results of ATLAS simulation software. Automated design has resulted in a high-performance MUTC-PD with a responsivity of 0.52A/W and a bandwidth of 60 GHz (@-3 V) at a mesa diameter of 16µm. Compared to the pre-optimized device, the bandwidth is increased to three times the original. By reducing the mesa diameter to 4µm, the bandwidth can be further increased to 82 GHz (@-3 V). The proposed method's calculation speed is fast enough, enabling extensive parameter studies to optimize device performance.
Design of uni-traveling-carrier photodiode with nanoscale optical microstructures

Junjie Wang,Kai Liu,Xiaowen Dong,Xiaofeng Duan,Yongqing Huang,Xiaomin Ren

DOI: https://doi.org/10.1016/j.optcom.2024.130305

IF: 2.4

2024-01-16

Optics Communications

Abstract:In this article, we report a uni-traveling-carrier photodiode (UTC-PD) incorporating nanoscale optical microstructures. We have designed a UTC-PD incorporating a core-cladding confinement structure, which incorporates internal optical scattering structures to convert incident light from vertical incidence to lateral propagation, and to as much as possible confine light within the absorption layer of the UTC-PD. In this way, the proposed UTC-PD can have an operating performance like that of a waveguide-type PD under vertical light incidence, and its responsivity will increase. The ideal responsivity of the designed UTC-PD with an absorption layer thickness of 200nm after optimization can reach 0.43 A/W, which is 48 % higher than that of the traditional structure.

optics

Design and optimization of MUTC photodiode performance under high-power operating conditions

Back-illuminated Modified Uni-Traveling-carrier Photo-Diodes (Mutc-Pds) with 3-Db Bandwidth over 40 GHz

Bandwidth Optimization and Fabrication of High-Power MUTC-PD

Ultrafast MUTC Photodiodes over 200 GHz with High Saturation Power.

Ultrafast MUTC Photodiodes with 230 GHz Bandwidth

High-Power, Wide-Bandwidth Modified Uni-Traveling-Carrier Photodiodes with an Optimized Depletion Region

150 GHz Bandwidth Modified Uni-traveling-carrier Photodiodes with 2.45 Dbm Saturation Output Power

Bandwidth improvement of high power uni-traveling-carrier photodiodes by reducing the series resistance and capacitance

Depletion Region Optimization in UTC Photodiodes for High Speed and High Power Performance

High-power MUTC Photodiode with WR-8 Rectangular Waveguide Output

Characterization and optimization of high-power InGaAs/InP photodiodes

Comprehensive Design Method of MUTC-PD for Terahertz Applications

Analysis of Frequency Response of High Power MUTC Photodiodes Based on Photocurrent-Dependent Equivalent Circuit Model

D-Band MUTC Photodiodes with Flat Frequency Response

Modified Uni-Traveling-Carrier Photodetector with Its Optimized Cliff Layer

An 850 Nm InGaAs Modified Uni-Traveling-Carrier Photodiode Enhanced by Distributed Bragg Reflector

High-Power High-Linearity Modified Uni-Traveling Carrier Photodiodes

Characterization and Optimization of InGaAs/InP Photodiodes with High Saturation Current

Nearly-Ballistic Optimization Design of High-Speed Uni-Traveling-Carrier Photodiodes

Automated intelligent design of modified uni-traveling carrier photodectors

Design of uni-traveling-carrier photodiode with nanoscale optical microstructures