Abstract:This paper presents preliminary results of a high speed 1550 nm indium gallium arsenide (InGaAs)-based mesa-type modified uni-traveling carrier photodiode (M-UTC-PD) structure. Conventional UTC-PD refers to P-I-N type photodiodes which selectively use electrons as active carriers. Photons absorbed in the relatively thin P-type absorber create minority carriers which are field accelerated toward a depleted collector thereby establishing high velocity ballistic transport, making these structures applicable for high speed applications. The M-UTC-PD structure presented uses spatially tailored P-type absorber regions to limit minority carrier generation both in the lateral and axial dimensions. Utilizing an otherwise conventional UTC-PD epitaxial structure where the top P-type layers are undoped, the spatially tailored P-type regions are defined by closed ampoule Zinc diffusion techniques. The M-UTC-PD structure presented utilizes a series of nested p-doped rings within a mesa structure to limit dark current and reduce overall capacitance to improve high speed operation. Two photodiode structures will be investigated for this research project, a conventional UTC-PD structure and a modified structure, utilizing similar device designs, epitaxial designs and fabrication processes. The conventional structure will be utilized for fabrication process development, verification of epi quality and development of rapid prototyping approach toward chip-based testing and subsequent high speed RF testing procedures. Conventional UTC-PD device results will be used as a comparison to quantify the performance of the M-UTC-PD structure utilizing Zn-doped defined p-type absorber regions. Results are given for chip tests of UTC-PD chips verifying epitaxial quality and fabrication process, subsequent testing of packaged devices and RF analysis remains. Process development of the Zn-doped devices is underway, once completed, these devices will be compared to the base design to quantify performance enhancement associated with the modified design.

Analysis of Frequency Response of High Power MUTC Photodiodes Based on Photocurrent-Dependent Equivalent Circuit Model

Bandwidth improvement of high power uni-traveling-carrier photodiodes by reducing the series resistance and capacitance

Back-illuminated Modified Uni-Traveling-carrier Photo-Diodes (Mutc-Pds) with 3-Db Bandwidth over 40 GHz

Characterization and optimization of high-power InGaAs/InP photodiodes

Study on the Saturation Characteristics of High-Speed Uni-Traveling-carrier Photodiodes Based on Field Screening Analysis

Design and optimization of MUTC photodiode performance under high-power operating conditions

High-Power, Wide-Bandwidth Modified Uni-Traveling-Carrier Photodiodes with an Optimized Depletion Region

D-Band MUTC Photodiodes with Flat Frequency Response

Characterization and Optimization of InGaAs/InP Photodiodes with High Saturation Current

High-Saturation-Current Modified Uni-Traveling-Carrier Photodiode With Cliff Layer

Ultrafast MUTC Photodiodes over 200 GHz with High Saturation Power.

An Equivalent Circuit Model for Uni-Traveling-Carrier Photodiode

High-Power High-Linearity InGaAs/InP Photodiodes

Bandwidth Optimization and Fabrication of High-Power MUTC-PD

The Behavior of the Intermodulation Distortions of Modified Uni-Traveling Carrier Photodiodes Produced by Bias Modulation

Back-To-Back Utc-Pds with High Responsivity, High Saturation Current and Wide Bandwidth

Analysis of Carrier Transportation in High Power Uni- Traveling-Carrier Photodiodes based on Self-Consistent Monte Carlo Model

High Speed 1550 nm Indium Gallium Arsenide-Indium Phosphide Photodetector

An 850 Nm InGaAs Modified Uni-Traveling-Carrier Photodiode Enhanced by Distributed Bragg Reflector

The Effect of Illumination Uniformity on the Saturation Characteristics of Photodiode

Depletion Region Optimization in UTC Photodiodes for High Speed and High Power Performance