Abstract:Novel evanescently coupled waveguide modified uni-traveling carrier photodiodes (MUTC-PDs) employing a thick multi-layer coupling waveguide are reported. To improve the optical-to-electrical (O/E) conversion efficiency, a thick multi-layer coupling waveguide with a gradually increased refractive index from the bottom layer to the absorption layer is utilized. The refractive index profile facilitates the upward transmission of incident light into the absorption region, thereby enhancing the evanescent coupling efficiency. Meanwhile, the coupling waveguide, with a total thickness of 1.75 µm, expands the mode field diameter, thereby reducing the input coupling loss. Additionally, the top layer of the coupling waveguide also serves as the drift layer. This configuration facilitates efficient light absorption within a short PD length, thus ensuring ultrawide bandwidth and high O/E conversion efficiency simultaneously. Without an additional spot size coupler or anti-reflection coating, the measured responsivity is as high as 0.38 A/W for the PD with an active area of 5 × 6 µm2. Meanwhile, an ultrawide 3-dB bandwidth of 153 GHz has been demonstrated.

Back-illuminated Modified Uni-Traveling-carrier Photo-Diodes (Mutc-Pds) with 3-Db Bandwidth over 40 GHz

Ultrafast MUTC Photodiodes with 230 GHz Bandwidth

Ultrafast MUTC Photodiodes over 200 GHz with High Saturation Power.

Back-To-Back Utc-Pds with High Responsivity, High Saturation Current and Wide Bandwidth

High-Power, Wide-Bandwidth Modified Uni-Traveling-Carrier Photodiodes with an Optimized Depletion Region

D-Band MUTC Photodiodes with Flat Frequency Response

Bandwidth improvement of high power uni-traveling-carrier photodiodes by reducing the series resistance and capacitance

Ultra-fast Waveguide MUTC Photodiodes over 220 GHz

150 GHz Bandwidth Modified Uni-traveling-carrier Photodiodes with 2.45 Dbm Saturation Output Power

Double-cliff-layer Uni-Traveling-carrier Photodiode with High Responsivity and Ultra-Broad Bandwidth

Ultrafast evanescently coupled waveguide MUTC-PDs with high responsivity

An 850 Nm InGaAs Modified Uni-Traveling-Carrier Photodiode Enhanced by Distributed Bragg Reflector

Design and optimization of MUTC photodiode performance under high-power operating conditions

Modified Uni-Traveling-Carrier Photodetector with Its Optimized Cliff Layer

High-Saturation-Current Modified Uni-Traveling-Carrier Photodiode With Cliff Layer

High-Power High-Linearity Modified Uni-Traveling Carrier Photodiodes

Nearly-Ballistic Optimization Design of High-Speed Uni-Traveling-Carrier Photodiodes

Ultrafast Dual-Drifting Layer Uni-Traveling Carrier Photodiode with High Saturation Current

Bandwidth Optimization and Fabrication of High-Power MUTC-PD

Modified Uni-Traveling Carrier Photodiodes Heterogeneously Integrated on Silicon-on-Insulator (SOI)