High-Power High-Linearity Modified Uni-Traveling Carrier Photodiodes

A. Beling,H. Pan,H. Chen,J. C. Campbell

DOI: https://doi.org/10.1364/ipnra.2008.iwc3

2008-01-01

Abstract:We demonstrate a modified uni-traveling carrier photodiode (MUTC-PD) with a record-high third-order intercept point of 52dBm at 75mA and 300MHz. To further enhance the dynamic range we propose a monolithically integrated traveling wave MUTC-PD array.

What problem does this paper attempt to address?

Back-illuminated Modified Uni-Traveling-carrier Photo-Diodes (Mutc-Pds) with 3-Db Bandwidth over 40 GHz

Zheng Zhen,Ran Hao,Dong Xing,Zhihong Feng,Shangzhong Jin,Erping Li

DOI: https://doi.org/10.1117/12.2585422

2020-01-01

Abstract:InP-based back-illuminated modified uni-traveling-carrier photodiodes (MUTC-PDs) with high-speed and high-responsivity are demonstrated using flip-chip technology in this letter. The partially depleted absorption layer with gradual doping and cliff layer are utilized to realize large 3-dB bandwidth. A high responsivity of 0.54 A/W with over 40 GHz large 3-dB bandwidth from a 7-mu m-diameter back-illuminated MUTC-PD is achieved. The results demonstrate that the modified design can effectively enhance the internal electric field and concentration gradient, so as to optimize the response speed of the device.
High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode.

Zhi Li,Yang Fu,Molly Piels,Huapu Pan,Andreas Beling,John E Bowers,Joe C Campbell

DOI: https://doi.org/10.1364/OE.19.00B385

IF: 3.8

2011-01-01

Optics Express

Abstract:We demonstrate a flip-chip bonded modified uni-traveling carrier (MUTC) photodiode with an RF output power of 0.75 W (28.8 dBm) at 15 GHz and OIP3 as high as 59 dBm. The photodiode has a responsivity of 0.7 A/W, 3-dB bandwidth > 15 GHz, and saturation photocurrent > 180 mA at 11 V reverse bias. (C)2011 Optical Society of America
High-Power, Wide-Bandwidth Modified Uni-Traveling-Carrier Photodiodes with an Optimized Depletion Region

Jin Li,Bing Xiong,Yi Luo,Changzheng Sun,Zhibiao Hao,Jian Wang,Yanjun Han,Lai Wang,Hongtao Li

DOI: https://doi.org/10.7567/apex.9.052203

IF: 2.819

2016-01-01

Applied Physics Express

Abstract:A modified uni-traveling-carrier photodiode (MUTC-PD) with an optimized depletion region is fabricated and its saturation characteristics are investigated. The space-charge effect is effectively suppressed by inserting a carefully designed cliff layer in the middle of the depletion region. The 22-µm-diameter device exhibits a bandwidth of 28 GHz. Compared with our previous work, the saturation photocurrent of the novel device is increased from 55 to 99 mA, and the corresponding RF power is increased from 15.5 to 20.1 dBm. Furthermore, a 12-µm-diameter device with a bandwidth of 50 GHz is demonstrated, together with a saturation photocurrent of 61 mA, corresponding to an RF power of 15.3 dBm.
Modified Uni-Traveling Carrier Photodiodes Heterogeneously Integrated on Silicon-on-Insulator (SOI)

Andreas Beling,Yang Fu,Zhi Li,Huapu Pan,Qiugui Zhou,Allen Cross,Molly Piels,Jon Peters,John E. Bowers,Joe C. Campbell

DOI: https://doi.org/10.1364/iprsn.2012.im2a.2

2012-01-01

Abstract:We propose and demonstrate a novel InP-based evanescently-coupled modified uni-traveling carrier photodiode (MUTC PD) on SOI waveguide. A 100-µm long waveguide MUTC PD reaches a third-order local intercept point (IP3) of 20 dBm at 7 GHz and 10 mA.
High-Linearity Modified Uni-Traveling Carrier Photodiodes

Huapu Pan,Yang Fu,Zhi Li,Joe C. Campbell

DOI: https://doi.org/10.1364/ofc.2010.own1

2010-01-01

Abstract:We report novel InGaAs/InP modified uni-traveling carrier photodiodes with record linearity. At low frequencies the third-order output intercept point (OIP3) is 55 dBm and remains as high as 47.5 dBm at 20 GHz. (C) 2010 Optical Society of America
High-power Modified Uni-Traveling Carrier Photodiode with &#x226b; 50 Dbm Third Order Intercept Point

Andréas Beling,Huapu Pan,Hao Chen,Joe C. Campbell

DOI: https://doi.org/10.1109/mwsym.2008.4633212

2008-01-01

Abstract:The third-order intermodulation distortions of an InGaAs/InP charge compensated modified uni-traveling carrier photodiode are characterized using a two-tone setup. At 0.3 GHz modulation frequency the third order local intercept point (IP3) reaches a record-high of 52 dBm and remains above 35 dBm up to the photodiode’s 3 dB bandwidth of 23 GHz. A simple equivalent circuit model with a voltage-dependent junction capacitance is used to analyze the frequency characteristics of the intermodulation distortions.
150 GHz Bandwidth Modified Uni-traveling-carrier Photodiodes with 2.45 Dbm Saturation Output Power

Yuxin Tian,Bing Xiong,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Yi Luo

DOI: https://doi.org/10.1109/acp55869.2022.10088569

2022-01-01

Abstract:Back-illuminated modified uni-traveling-carrier photodiodes (MUTC-PDs) are optimized to achieve high power and wide bandwidth. The fabricated 6-μm-diameter PD demonstrates a 3-dB bandwidth of 150 GHz with a record-high saturation power of 2.45 dBm @ 150 GHz.
Bandwidth improvement of high power uni-traveling-carrier photodiodes by reducing the series resistance and capacitance

Jin Li,Bing Xiong,Chang-Zheng Sun,Yi Luo,Jian Wang,Zhi-Biao Hao,Yan-Jun Han,Lai Wang,Hong-Tao Li

DOI: https://doi.org/10.1088/1674-1056/24/7/078503

2015-06-25

Chinese Physics B

Abstract:A backside illuminated mesa-structure InGaAs/InP modified uni-traveling-carrier photodiode (MUTC-PD) with wide bandwidth and high saturation power is fabricated and investigated. The device structure is optimized to reduce the capacitance and resistance. For the 22-μm-diameter device, the maximum responsivity at 1.55 μm is 0.5 A/W, and the 3-dB cutoff frequency reaches up to 28 GHz. The output photocurrent at the 1-dB compression point is measured to be 54 mA at 25 GHz, with a corresponding output radio frequency (RF) power of up to 15.5 dBm. The saturation characteristics of the MUTC-PD are also verified by the electric field simulation, and electric field collapse is found to be the cause of the saturation phenomenon.

physics, multidisciplinary
High-Saturation-Current Modified Uni-Traveling-Carrier Photodiode With Cliff Layer

Zhi Li,Huapu Pan,Hao Chen,Andreas Beling,Joe C. Campbell

DOI: https://doi.org/10.1109/JQE.2010.2046140

2010-01-01

Abstract:We demonstrate two modified uni-traveling carrier photodiode (MUTC) structures that incorporate a charge or “cliff” layer to attain high-saturation-current. MUTC1 achieved responsivity of 0.82 A/W and 134 mA saturation current at -6-V and 20 GHz. The MUTC2 structure, which has higher doping density in the cliff layer and thinner absorption region, exhibited a higher saturation current of 144 mA (at -5-V) and an improved 3 dB bandwidth of 24 GHz; however, the responsivity was reduced to 0.69 A/W. For MUTC2, a high-saturation-current bandwidth product of 3456 GHz mA has been achieved. An intermodulation distortion figure of merit, IP3, > dBm at 20 GHz was observed for both MUTC structures.
D-Band MUTC Photodiodes with Flat Frequency Response

Enfei Chao,Bing Xiong,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Jiadong Yu,Yi Luo

DOI: https://doi.org/10.1109/jstqe.2021.3115488

IF: 4.9

2021-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:Novel back-illuminated modified uni-traveling- carrier photodiodes (MUTC-PDs) are reported to demonstrate wide bandwidth and high output power performance at D-band (110–170 GHz) regime. A comprehensive design model is employed to predict and tune the frequency response by incorporating coplanar waveguides (CPWs) with different inductive peaking effects. As a demonstration, 4.5-μm-diameter photodiodes with two types of CPWs are fabricated to exhibit different frequency response profiles. Both PDs exhibit a 3-dB bandwidth over 150 GHz and the measured frequency responses are in excellent agreement with simulations. Thanks to the proper design of the CPW electrodes, the two PDs exhibit an output power roll-off of only 4.3 dB and 4.8 dB from dc to 170 GHz, respectively, and high saturation performance is maintained over the broadband frequency range of 130–170 GHz.
Ultrafast MUTC Photodiodes with 230 GHz Bandwidth

Yuxin Tian,Bing Xiong,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Lin Gan,Yi Luo

DOI: https://doi.org/10.1109/OECC56963.2023.10209609

2023-01-01

Abstract:Novel back-illuminated modified uni-traveling-carrier photodiodes (MUTC-PDs) are designed to achieve ultrawide bandwidth. The fabricated 3-μm-diameter PDs demonstrate a 3-dB bandwidth of 230 GHz with a saturation power of −4.94 dBm @ 220 GHz.
High-power MUTC Photodiode with WR-8 Rectangular Waveguide Output

Yuxin Tian,Bing Xiong,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Lin Gan,Yi Luo

DOI: https://doi.org/10.1364/cleo_si.2024.sm1i.6

2024-01-01

Abstract:We present a compact modified uni-travelling-carrier (MUTC) photodiode module with WR-8 rectangular waveguide output. The packaged device exhibits a flat optoelectronic frequency response with a peak RF output power of −0.97 dBm (800 μW).
Ultrafast MUTC Photodiodes over 200 GHz with High Saturation Power.

Yuxin Tian,Bing Xiong,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Lin Gan,Yi Luo

DOI: https://doi.org/10.1364/oe.491552

IF: 3.8

2023-01-01

Optics Express

Abstract:Novel back-illuminated modified uni-traveling-carrier photodiodes (MUTC-PDs) with wide bandwidth and high saturation power are demonstrated. The effect of cliff layer doping on the electric field distribution is investigated to achieve fast carrier transport. MUTC-PDs with miniaturized device diameter and low contact resistance are fabricated to improve the RC-limited bandwidth. Meanwhile, inductive peaking is implemented to further extend the bandwidth. PDs with 3-µm and 3.6-µm-diameter exhibit a ultrawide bandwidth of 230 GHz and 200 GHz, together with −4.94 dBm and −2.14 dBm saturation power at 220 GHz and 200 GHz, respectively.
High-Power High-Linearity InGaAs/InP Photodiodes

Andreas Beling,Huapu Pan,Joe C. Campbell

DOI: https://doi.org/10.1149/1.3104708

2009-01-01

ECS Transactions

Abstract:The third-order intermodulation distortions of an InGaAs/InP modified uni-traveling carrier photodiode (MUTC-PD) are characterized using a two-tone setup. At 0.3 GHz modulation frequency and photocurrents above 40 mA the third order local intercept point (IP3) reaches 52 dBm and remains above 35 dBm up to the photodiode's 3 dB bandwidth. A simple equivalent circuit model is used to explain the frequency characteristics of the intermodulation distortions. Based on experimental data, we find that the frequency characteristics of the IP3 can be attributed to the change of both the responsivity and device capacitance induced by the photocurrent and the transient voltage drop at the load and series resistors. Further investigations of the non-linear phenomena suggest that the Franz-Keldysh effect and impact ionization are the primary reasons for voltage-dependent responsivity, while low doping concentration in the p-type InGaAs absorber and space charge screening are responsible for the voltage dependent capacitance and photocurrent dependent capacitance, respectively.
An 850 Nm InGaAs Modified Uni-Traveling-Carrier Photodiode Enhanced by Distributed Bragg Reflector

Jian Wang,Zhipeng Dou,Guanghao Li,Xiaofeng Huang,Qian Yu,Zhibiao Hao,Bing Xiong,Changzheng Sun,Yanjun Han,Lai Wang,Hongtao Li,Lin Gan,Yi Luo

DOI: https://doi.org/10.1109/lpt.2024.3406785

IF: 2.6

2024-01-01

IEEE Photonics Technology Letters

Abstract:We report an 850 nm surface-illuminated InGaAs modified uni-travelling-carrier photodiode (MUTC-PD) with distributed Bragg reflector (DBR) bottom mirror. By adopting InGaAs as the absorber, which exhibits a higher absorption coefficient than GaAs, the absorption layer thickness can be reduced to 960 nm, so as to minimize the transit time of the photogenerated carriers. The fabricated MUTC-PD demonstrates a 3-dB bandwidth of 27.5 GHz and a responsivity of 0.51 A/W under a bias of -2 V at the wavelength of 850 nm.
Two-Tone Characterization of High-Power Modified Uni-Traveling Carrier Photodiode

A. Beling,H. Pan,H. Chen,J. C. Campbell

DOI: https://doi.org/10.1109/leos.2007.4382442

2007-01-01

Abstract:The two-tone third-order intermodulation distortions of an InGaAs/InP modified charge compensated uni-traveling carrier photodiode with both absorbing and non-absorbing depleted region are characterized. Around 12 GHz modulation frequency, the third-order intercept point is >40 dBm over a wide range of photocurrents.
Linearity Of Modified Uni-Traveling Carrier Photodiodes

Andreas Beling,Huapu Pan,Hao Chen,Joe C. Campbell

DOI: https://doi.org/10.1109/JLT.2008.927184

2008-01-01

Abstract:The third-order intermodulation distortions of an InGaAs/InP charge compensated modified uni-traveling carrier (UTC) photodiode are characterized using a two-tone setup. At 0.3-GHz modulation frequency and photocurrents above 40 mA, the third-order local intercept point (IP3) reaches a record-high of 52 dBm and remains above 35 dBm up to the photodiode's 3-dB bandwidth. A simple equivalent circuit model with a voltage-dependent responsivity and a voltage- and photocurrent-dependent junction capacitance is used to explain the frequency characteristics of the intermodulation distortions.
High-Power Evanescently Coupled Waveguide MUTC Photodiode With >105-GHz Bandwidth

J. Campbell,K. Sun,Qinglong Li,Qianhuan Yu,A. Beling,P. Runge,Kejia Li,W. Ebert

DOI: https://doi.org/10.1109/JLT.2017.2759210

IF: 4.7

2017-11-01

Journal of Lightwave Technology

Abstract:We demonstrate high-speed and high-power evanescently coupled waveguide integrated modified unitraveling carrier photodiodes. Over 105-GHz bandwidth along with 2 and 1.3 dBm RF output power at 100 and 105 GHz, respectively, has been achieved.

Engineering,Physics,Materials Science
Ultra-fast Waveguide MUTC Photodiodes over 220 GHz

Linze Li,Luyu Wang,Tianyu Long,Zhouze Zhang,Juanjuan Lu,Baile Chen

2024-02-12

Abstract:We present InP-based evanescently-coupled waveguide modified uni-traveling carrier photodiodes (MUTC-PDs) exhibiting a breakthrough in bandwidth. The optimization of carrier transport and optical coupling is achieved through a detailed discussion on the design of the cliff layer and waveguide layer. Addressing the parasitic capacitance challenge, we introduce benzocyclobutene (BCB) beneath the PD electrodes, effectively overcoming the bandwidth bottleneck associated with the RC time constant. Devices with sizes of 2 * 7 um2 and 2 * 10 um2 achieve 3-dB bandwidths over 220 GHz, along with external responsivities of 0.161 A/W and 0.237 A/W, respectively. Notably, the RF output power reaches a peak of -1.69 dBm at 215 GHz for 2 * 15 um2 PDs.

Applied Physics,Optics
Back-To-Back Utc-Pds with High Responsivity, High Saturation Current and Wide Bandwidth

Tuo Shi,Bing Xiong,Changzheng Sun,Yi Luo

DOI: https://doi.org/10.1109/lpt.2012.2229703

IF: 2.6

2013-01-01

IEEE Photonics Technology Letters

Abstract:A novel back-illuminated mesa-structure back-to-back uni-traveling-carrier photodiode (UTC-PD) is proposed and realized. By stacking two UTC-PDs to form a PINIP structure, high responsivity, high output saturation power, and wide bandwidth are achieved simultaneously. The responsivity of a 24-mu m-diameter device is as high as 0.86 A/W, and a 3-dB bandwidth up to 28.3 GHz is attained. The saturation current up to 62 mA at 1-dB compression point is demonstrated at the frequency of 24 GHz.

High-Power High-Linearity Modified Uni-Traveling Carrier Photodiodes

Back-illuminated Modified Uni-Traveling-carrier Photo-Diodes (Mutc-Pds) with 3-Db Bandwidth over 40 GHz

High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode.

High-Power, Wide-Bandwidth Modified Uni-Traveling-Carrier Photodiodes with an Optimized Depletion Region

Modified Uni-Traveling Carrier Photodiodes Heterogeneously Integrated on Silicon-on-Insulator (SOI)

High-Linearity Modified Uni-Traveling Carrier Photodiodes

High-power Modified Uni-Traveling Carrier Photodiode with &amp;#x226b; 50 Dbm Third Order Intercept Point

150 GHz Bandwidth Modified Uni-traveling-carrier Photodiodes with 2.45 Dbm Saturation Output Power

Bandwidth improvement of high power uni-traveling-carrier photodiodes by reducing the series resistance and capacitance

High-Saturation-Current Modified Uni-Traveling-Carrier Photodiode With Cliff Layer

D-Band MUTC Photodiodes with Flat Frequency Response

Ultrafast MUTC Photodiodes with 230 GHz Bandwidth

High-power MUTC Photodiode with WR-8 Rectangular Waveguide Output

Ultrafast MUTC Photodiodes over 200 GHz with High Saturation Power.

High-Power High-Linearity InGaAs/InP Photodiodes

An 850 Nm InGaAs Modified Uni-Traveling-Carrier Photodiode Enhanced by Distributed Bragg Reflector

Two-Tone Characterization of High-Power Modified Uni-Traveling Carrier Photodiode

Linearity Of Modified Uni-Traveling Carrier Photodiodes

High-Power Evanescently Coupled Waveguide MUTC Photodiode With >105-GHz Bandwidth

Ultra-fast Waveguide MUTC Photodiodes over 220 GHz

Back-To-Back Utc-Pds with High Responsivity, High Saturation Current and Wide Bandwidth

High-power Modified Uni-Traveling Carrier Photodiode with ≫ 50 Dbm Third Order Intercept Point