High-Linearity Modified Uni-Traveling Carrier Photodiodes

Huapu Pan,Yang Fu,Zhi Li,Joe C. Campbell

DOI: https://doi.org/10.1364/ofc.2010.own1

2010-01-01

Abstract:We report novel InGaAs/InP modified uni-traveling carrier photodiodes with record linearity. At low frequencies the third-order output intercept point (OIP3) is 55 dBm and remains as high as 47.5 dBm at 20 GHz. (C) 2010 Optical Society of America

What problem does this paper attempt to address?

Measurement and modeling of high-linearity modified uni-traveling carrier photodiode with highly-doped absorber.

Huapu Pan,Zhi Li,Andreas Beling,Joe C Campbell

DOI: https://doi.org/10.1364/OE.17.020221

IF: 3.8

2009-01-01

Optics Express

Abstract:The third-order intermodulation distortions of InGaAs/InP modified uni-traveling carrier photodiodes with a highly-doped p-type absorber are characterized. The third-order local intercept point is 55 dBm at low frequency (<3 GHz) and remains as high as 47.5 dBm up to 20 GHz. The frequency characteristics of the OIP3 are well explained by an equivalent circuit model. (C) 2009 Optical Society of America
Characterization of High-Linearity Modified Uni-Traveling Carrier Photodiodes Using Three-Tone and Bias Modulation Techniques

Huapu Pan,Zhi Li,Andreas Beling,Joe C. Campbell

DOI: https://doi.org/10.1109/jlt.2010.2041038

IF: 4.7

2010-01-01

Journal of Lightwave Technology

Abstract:The linearity performance of a back-illuminated InGaAs/InP modified uni-traveling carrier photodiode with a highly doped p-type absorber is characterized using three-tone and bias modulation measurement techniques. The bias modulation measurement is used to determine the voltage-dependent relative responsivity, R(V), for a range of photocurrent levels. The results confirm that the photocurrent dependence of the third-order output intercept point (OIP3) as determined by the three-tone method is directly related to the dependence of R(V) on photocurrent. The measured OIP3 show a weak dependence on frequency and a high value of 47.5 dBm at 20 GHz is achieved.
High-Linearity Uni-Traveling-Carrier Photodiodes

Huapu Pan,Andreas Beling,Joe C. Campbell

DOI: https://doi.org/10.1109/lpt.2009.2034126

IF: 2.6

2009-01-01

IEEE Photonics Technology Letters

Abstract:The third-order intermodulation distortions of an InGaAs-InP charge-compensated uni-traveling-carrier photodiode are characterized using both two-tone and three-tone measurement techniques. Up to 720-MHz modulation frequency the third-order output intercept point (OIP3) reaches 56 ±1 dBm.
High-Power High-Linearity Modified Uni-Traveling Carrier Photodiodes

A. Beling,H. Pan,H. Chen,J. C. Campbell

DOI: https://doi.org/10.1364/ipnra.2008.iwc3

2008-01-01

Abstract:We demonstrate a modified uni-traveling carrier photodiode (MUTC-PD) with a record-high third-order intercept point of 52dBm at 75mA and 300MHz. To further enhance the dynamic range we propose a monolithically integrated traveling wave MUTC-PD array.
A High-Linearity Modified Uni-Traveling Carrier Photodiode with Offset Effects of Nonlinear Capacitance

Huapu Pan,Andreas Beling,Hao Chen,Joe C. Campbell,P. D. Yoder

DOI: https://doi.org/10.1109/jlt.2009.2024168

IF: 4.7

2009-01-01

Journal of Lightwave Technology

Abstract:Third-order intermodulation distortion in an InGaAs/InP charge compensated modified uni-traveling carrier photodiode is characterized using a two-tone setup. Plots of the third-order local intercept point (IP3) versus photocurrent exhibit peaks. A simple analytical model is developed which explains that the peaks are due to the interaction of voltage-dependent and photocurrent-dependent capacitance effects.
Linearity Of Modified Uni-Traveling Carrier Photodiodes

Andreas Beling,Huapu Pan,Hao Chen,Joe C. Campbell

DOI: https://doi.org/10.1109/JLT.2008.927184

2008-01-01

Abstract:The third-order intermodulation distortions of an InGaAs/InP charge compensated modified uni-traveling carrier (UTC) photodiode are characterized using a two-tone setup. At 0.3-GHz modulation frequency and photocurrents above 40 mA, the third-order local intercept point (IP3) reaches a record-high of 52 dBm and remains above 35 dBm up to the photodiode's 3-dB bandwidth. A simple equivalent circuit model with a voltage-dependent responsivity and a voltage- and photocurrent-dependent junction capacitance is used to explain the frequency characteristics of the intermodulation distortions.
High-power Modified Uni-Traveling Carrier Photodiode with &#x226b; 50 Dbm Third Order Intercept Point

Andréas Beling,Huapu Pan,Hao Chen,Joe C. Campbell

DOI: https://doi.org/10.1109/mwsym.2008.4633212

2008-01-01

Abstract:The third-order intermodulation distortions of an InGaAs/InP charge compensated modified uni-traveling carrier photodiode are characterized using a two-tone setup. At 0.3 GHz modulation frequency the third order local intercept point (IP3) reaches a record-high of 52 dBm and remains above 35 dBm up to the photodiode’s 3 dB bandwidth of 23 GHz. A simple equivalent circuit model with a voltage-dependent junction capacitance is used to analyze the frequency characteristics of the intermodulation distortions.
Measurement And Modeling Of A High-Linearity Modified Uni-Traveling Carrier Photodiode

Andreas Beling,Huapu Pan,Hao Chen,Joe C. Campbell

DOI: https://doi.org/10.1109/LPT.2008.926016

2008-01-01

Abstract:The third-order intermodulation distortions of an InGaAs-InP charge compensated modified uni-traveling carrier photodiode (PD) are characterized using a two-tone setup. At 310-MHz modulation frequency, the third-order local intercept point (IP3) reaches 52 dBm and remains above 35 dBm up to 21 GHz. Based on experimental results for the dependence of responsivity and PD capacitance on bias voltage and photocurrent, we use a simple equivalent circuit model to simulate the frequency characteristics of the intermodulation distortions.
Two-Tone Characterization of High-Power Modified Uni-Traveling Carrier Photodiode

A. Beling,H. Pan,H. Chen,J. C. Campbell

DOI: https://doi.org/10.1109/leos.2007.4382442

2007-01-01

Abstract:The two-tone third-order intermodulation distortions of an InGaAs/InP modified charge compensated uni-traveling carrier photodiode with both absorbing and non-absorbing depleted region are characterized. Around 12 GHz modulation frequency, the third-order intercept point is >40 dBm over a wide range of photocurrents.
High-Power High-Linearity InGaAs/InP Photodiodes

Andreas Beling,Huapu Pan,Joe C. Campbell

DOI: https://doi.org/10.1149/1.3104708

2009-01-01

ECS Transactions

Abstract:The third-order intermodulation distortions of an InGaAs/InP modified uni-traveling carrier photodiode (MUTC-PD) are characterized using a two-tone setup. At 0.3 GHz modulation frequency and photocurrents above 40 mA the third order local intercept point (IP3) reaches 52 dBm and remains above 35 dBm up to the photodiode's 3 dB bandwidth. A simple equivalent circuit model is used to explain the frequency characteristics of the intermodulation distortions. Based on experimental data, we find that the frequency characteristics of the IP3 can be attributed to the change of both the responsivity and device capacitance induced by the photocurrent and the transient voltage drop at the load and series resistors. Further investigations of the non-linear phenomena suggest that the Franz-Keldysh effect and impact ionization are the primary reasons for voltage-dependent responsivity, while low doping concentration in the p-type InGaAs absorber and space charge screening are responsible for the voltage dependent capacitance and photocurrent dependent capacitance, respectively.
High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode.

Zhi Li,Yang Fu,Molly Piels,Huapu Pan,Andreas Beling,John E Bowers,Joe C Campbell

DOI: https://doi.org/10.1364/OE.19.00B385

IF: 3.8

2011-01-01

Optics Express

Abstract:We demonstrate a flip-chip bonded modified uni-traveling carrier (MUTC) photodiode with an RF output power of 0.75 W (28.8 dBm) at 15 GHz and OIP3 as high as 59 dBm. The photodiode has a responsivity of 0.7 A/W, 3-dB bandwidth > 15 GHz, and saturation photocurrent > 180 mA at 11 V reverse bias. (C)2011 Optical Society of America
High Overall Performance Uni-Traveling Carrier Photodiodes for Sub-Thz Wave Generation

Jianwei Chen,Ran Hao,Zheng Zhen,Huaqing Jiang,Kaida Tang,Chenyuan Chen,Shangzhong Jin

DOI: https://doi.org/10.1364/ao.481495

IF: 1.9

2023-01-01

Applied Optics

Abstract:Modified near-ballistic uni-traveling-carrier photodiodes with improved overall performances were studied theoretically and experimentally. A bandwidth up to 0.2 THz with a 3 dB bandwidth of 136 GHz and large output power of 8.22 dBm (99 GHz) under the −2V bias voltage were obtained. The device exhibits good linearity in the photocurrent-optical power curve even at large input optical power, with a responsivity of 0.206 A/W. Physical explanations for the improved performances have been made in detail. The absorption layer and the collector layer were optimized to retain a high built-in electric field around the interface, which not only ensures the smoothness of the band structure but also facilitates the near-ballistic transmission of uni-traveling carriers. The obtained results may find potential applications in future high-speed optical communication chips and high-performance terahertz sources.
Modified Uni-Traveling Carrier Photodiodes Heterogeneously Integrated on Silicon-on-Insulator (SOI)

Andreas Beling,Yang Fu,Zhi Li,Huapu Pan,Qiugui Zhou,Allen Cross,Molly Piels,Jon Peters,John E. Bowers,Joe C. Campbell

DOI: https://doi.org/10.1364/iprsn.2012.im2a.2

2012-01-01

Abstract:We propose and demonstrate a novel InP-based evanescently-coupled modified uni-traveling carrier photodiode (MUTC PD) on SOI waveguide. A 100-µm long waveguide MUTC PD reaches a third-order local intercept point (IP3) of 20 dBm at 7 GHz and 10 mA.
The influence of nonlinear capacitance and responsivity on the linearity of a modified uni-traveling carrier photodiode

huapu pan,andreas beling,hao chen,j c campbell,p d yoder

DOI: https://doi.org/10.1109/MWP.2008.4666640

2008-01-01

Abstract:Third-order intermodulation distortion in an InGaAs/InP charge compensated modified uni-traveling carrier photodiode is characterized using a two-tone setup. At 310 MHz modulation frequency the third-order local intercept point (IP3) reaches 52 dBm and remains above 35 dBm up to 21 GHz. Voltage dependent nonlinear responsivity is found to be the limiting factor for the IP3 at low frequency, while the voltage and photocurrent dependent nonlinear capacitance is responsible for the decreasing IP3 with increasing frequency. The physical origins of the nonlinear responsivity and capacitance are investigated.
High-Power Monolithically Integrated Traveling Wave Photodiode Array

Andreas Beling,Hao Chen,Huapu Pan,Joe C. Campbell

DOI: https://doi.org/10.1109/LPT.2009.2033817

IF: 2.6

2009-01-01

IEEE Photonics Technology Letters

Abstract:A novel traveling wave photodiode array (TWPDA) based on back-illuminated InGaAs-InP charge compensated modified uni-traveling carrier photodiodes is demonstrated. A two-element TWPDA with integrated termination resistor has a responsivity of 0.55 A/W and bandwidth of 17 GHz. The saturation photocurrent and the available electrical output power are 114 mA and + 13 dBm at - 3.5-V bias voltage, resp...
High-Linearity Monolithically Integrated Photodiodes and Wilkinson Power Combiner at 20 Ghz

Yang Fu,Huapu Pan,Chong Hu,Joe Campbell

DOI: https://doi.org/10.1109/photonics.2010.5698735

2010-01-01

Abstract:Photodiodes monolithically integrated with a Wilkinson power combiner have achieved over 50 dBm of third-order intercept point (OIP3) at 20 GHz and 64 mA photocurrent level.
Nonlinear Characteristics of Uni-Traveling Carrier Photodiode With InGaAs/GaAsSb Type-II Multiple Quantum Wells Absorber

Yaojiang Chen,Zhiqi Zhou,Pingchuan Ma,Baile Chen

DOI: https://doi.org/10.1109/jlt.2020.2994996

IF: 4.7

2020-09-01

Journal of Lightwave Technology

Abstract:Yaojiang Chen, Zhiqi Zhou, Pingchuan Ma, Baile Chen<br/>The linearity of high power photodetectors is the limiting factor to the dynamic range performance of analog optical links and microwave ... [J. Lightwave Technol. 38, 4867-4873 (2020)]

engineering, electrical & electronic,optics,telecommunications
Monolithically Integrated Linear-Cascade Modified Uni-traveling-carrier Photodiodes

Enfei Chao,Bing Xiong,Yaru Han,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Jiadong Yu,Yi Luo

DOI: https://doi.org/10.1364/acpc.2020.t4g.5

2020-01-01

Abstract:Linear-cascade modified uni-traveling-carrier photodiodes are monolithically integrated and exhibit a bandwidth improvement from 32 GHz to 54 GHz, which has been verified to result from the reduction of device capacitance due to the series structure. © 2020 The Author(s)
Ultrafast Modified Uni-Traveling Carrier Photodiode with 3-Db Bandwidth of 150 GHz

Enfei Chao,Bing Xiong,Changzheng Sun,Zhibiao Hao,Jian Wang,Lai Wang,Yanjun Han,Hongtao Li,Jiadong Yu,Yi Luo

DOI: https://doi.org/10.1364/cleo_si.2021.sm1d.3

2021-01-01

Abstract:Ultrafast modified uni-traveling carrier photodiodes are designed based on a comprehensive model. The 3-dB bandwidths of fabricated devices with 4.5- and 6.5-μm diameters are 150 GHz and 110 GHz, respectively, in agreement with our simulations.
Photodiodes with monolithically integrated wilkinson power combiner

Yang Fu,Huapu Pan,Joe C. Campbell

DOI: https://doi.org/10.1109/JQE.2009.2035058

2010-01-01

Abstract:We report improved output power and linearity characteristics of two InP/InGaAs partially-depleted-absorber photodiodes monolithically integrated with a Wilkinson power combiner and stub tuner in the frequency range up to 20 GHz.

High-Linearity Modified Uni-Traveling Carrier Photodiodes

Measurement and modeling of high-linearity modified uni-traveling carrier photodiode with highly-doped absorber.

Characterization of High-Linearity Modified Uni-Traveling Carrier Photodiodes Using Three-Tone and Bias Modulation Techniques

High-Linearity Uni-Traveling-Carrier Photodiodes

High-Power High-Linearity Modified Uni-Traveling Carrier Photodiodes

A High-Linearity Modified Uni-Traveling Carrier Photodiode with Offset Effects of Nonlinear Capacitance

Linearity Of Modified Uni-Traveling Carrier Photodiodes

High-power Modified Uni-Traveling Carrier Photodiode with &amp;#x226b; 50 Dbm Third Order Intercept Point

Measurement And Modeling Of A High-Linearity Modified Uni-Traveling Carrier Photodiode

Two-Tone Characterization of High-Power Modified Uni-Traveling Carrier Photodiode

High-Power High-Linearity InGaAs/InP Photodiodes

High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode.

High Overall Performance Uni-Traveling Carrier Photodiodes for Sub-Thz Wave Generation

Modified Uni-Traveling Carrier Photodiodes Heterogeneously Integrated on Silicon-on-Insulator (SOI)

The influence of nonlinear capacitance and responsivity on the linearity of a modified uni-traveling carrier photodiode

High-Power Monolithically Integrated Traveling Wave Photodiode Array

High-Linearity Monolithically Integrated Photodiodes and Wilkinson Power Combiner at 20 Ghz

Nonlinear Characteristics of Uni-Traveling Carrier Photodiode With InGaAs/GaAsSb Type-II Multiple Quantum Wells Absorber

Monolithically Integrated Linear-Cascade Modified Uni-traveling-carrier Photodiodes

Ultrafast Modified Uni-Traveling Carrier Photodiode with 3-Db Bandwidth of 150 GHz

Photodiodes with monolithically integrated wilkinson power combiner

High-power Modified Uni-Traveling Carrier Photodiode with ≫ 50 Dbm Third Order Intercept Point