Abstract:The third-order intermodulation distortions of an InGaAs/InP modified uni-traveling carrier photodiode (MUTC-PD) are characterized using a two-tone setup. At 0.3 GHz modulation frequency and photocurrents above 40 mA the third order local intercept point (IP3) reaches 52 dBm and remains above 35 dBm up to the photodiode's 3 dB bandwidth. A simple equivalent circuit model is used to explain the frequency characteristics of the intermodulation distortions. Based on experimental data, we find that the frequency characteristics of the IP3 can be attributed to the change of both the responsivity and device capacitance induced by the photocurrent and the transient voltage drop at the load and series resistors. Further investigations of the non-linear phenomena suggest that the Franz-Keldysh effect and impact ionization are the primary reasons for voltage-dependent responsivity, while low doping concentration in the p-type InGaAs absorber and space charge screening are responsible for the voltage dependent capacitance and photocurrent dependent capacitance, respectively.

High-Linearity Uni-Traveling-Carrier Photodiodes

Measurement And Modeling Of A High-Linearity Modified Uni-Traveling Carrier Photodiode

Linearity Of Modified Uni-Traveling Carrier Photodiodes

A High-Linearity Modified Uni-Traveling Carrier Photodiode with Offset Effects of Nonlinear Capacitance

Measurement and modeling of high-linearity modified uni-traveling carrier photodiode with highly-doped absorber.

High-Power High-Linearity InGaAs/InP Photodiodes

High-power Modified Uni-Traveling Carrier Photodiode with &#x226b; 50 Dbm Third Order Intercept Point

Two-Tone Characterization of High-Power Modified Uni-Traveling Carrier Photodiode

High-Linearity Modified Uni-Traveling Carrier Photodiodes

Characterization of High-Linearity Modified Uni-Traveling Carrier Photodiodes Using Three-Tone and Bias Modulation Techniques

The influence of nonlinear capacitance and responsivity on the linearity of a modified uni-traveling carrier photodiode

The Behavior of the Intermodulation Distortions of Modified Uni-Traveling Carrier Photodiodes Produced by Bias Modulation

Measurement and Modelling of High-Linearity Partially Depleted Absorber Photodiode

The Frequency Behavior of the Intermodulation Distortions of Modified Uni-Traveling Carrier Photodiodes Based on Modulated Voltage Measurements

Characterizing and Modeling Nonlinear Intermodulation Distortions in Modified Uni-Traveling Carrier Photodiodes

High-Power High-Linearity Modified Uni-Traveling Carrier Photodiodes

Modified Uni-Traveling Carrier Photodiodes Heterogeneously Integrated on Silicon-on-Insulator (SOI)

High sensitivity third-order autocorrelation measurement by intensity modulation and third harmonic detection.

High-Power Monolithically Integrated Traveling Wave Photodiode Array

Characterization and optimization of high-power InGaAs/InP photodiodes

High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode.