Measurement and modeling of high-linearity modified uni-traveling carrier photodiode with highly-doped absorber.

Huapu Pan,Zhi Li,Andreas Beling,Joe C Campbell
DOI: https://doi.org/10.1364/OE.17.020221
IF: 3.8
2009-01-01
Optics Express
Abstract:The third-order intermodulation distortions of InGaAs/InP modified uni-traveling carrier photodiodes with a highly-doped p-type absorber are characterized. The third-order local intercept point is 55 dBm at low frequency (<3 GHz) and remains as high as 47.5 dBm up to 20 GHz. The frequency characteristics of the OIP3 are well explained by an equivalent circuit model. (C) 2009 Optical Society of America
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