An 850 Nm InGaAs Modified Uni-Traveling-Carrier Photodiode Enhanced by Distributed Bragg Reflector
Jian Wang,Zhipeng Dou,Guanghao Li,Xiaofeng Huang,Qian Yu,Zhibiao Hao,Bing Xiong,Changzheng Sun,Yanjun Han,Lai Wang,Hongtao Li,Lin Gan,Yi Luo
DOI: https://doi.org/10.1109/lpt.2024.3406785
IF: 2.6
2024-01-01
IEEE Photonics Technology Letters
Abstract:We report an 850 nm surface-illuminated InGaAs modified uni-travelling-carrier photodiode (MUTC-PD) with distributed Bragg reflector (DBR) bottom mirror. By adopting InGaAs as the absorber, which exhibits a higher absorption coefficient than GaAs, the absorption layer thickness can be reduced to 960 nm, so as to minimize the transit time of the photogenerated carriers. The fabricated MUTC-PD demonstrates a 3-dB bandwidth of 27.5 GHz and a responsivity of 0.51 A/W under a bias of -2 V at the wavelength of 850 nm.